PECVD RF versus dual frequency: an investigation of plasma influence on metal–organic precursors' decomposition and material characteristics

Abstract

Plasma enhanced metal organic chemical vapor deposition (PEMOVCD) of titanium nitride with dual frequency plasma sources were studied by means of plasma and material characterization. Adding a low frequency to a radio frequency plasma in order to enhance the deposition reaction mechanism is demonstrated. An in depth investigation of plasma by optical emission spectroscopy shows that due to secondary electrons heating the plasma, it enters a gamma-mode and that LF permits better dissociation of the H 2 reactant gas. Moreover, it appears that the TiN metal organic precursor is not completely dissociated (no Ti * emission) but new species are observed that indicate a different fragmentation of the precursor. When LF plasma is used these modifications can be correlated to a change in the deposition reaction mechanism which affects the properties of the deposited material. Strong modifications of the TiN properties and deposition rate are observed when adding 17-60 W LF to a 200 W RF plasma. For example, with 35 W LF added to a 200 W RF, the deposition rate is increased by a factor two and the film appears to be less resistive (by 50%) and has a higher density. Such effects are not observed when only increasing the RF power (from 200 to 300 W with no LF power).

Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

“…The selective depositions are realized in a reaction chamber included a pulsed liquid injection system for precursors vaporization and plasma assistance on 200 and 300 mm wafers. 29 This versatile tool allows the deposition of oxides, metal nitrides in CVD, PECVD, ALD, or PEALD modes. [29][30][31] The deposition module consists of an evaporating furnace and a deposition chamber.…”

“…29 This versatile tool allows the deposition of oxides, metal nitrides in CVD, PECVD, ALD, or PEALD modes. [29][30][31] The deposition module consists of an evaporating furnace and a deposition chamber. The furnace is used for the flash vaporization of the liquid precursor.…”

Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

“…It is also well known that the ion flux influences the compressive to tensile stress transition in dual frequency PECVD deposited SiN films 40 . In a previous study, we have shown that the growth rate, density and resistivity of a PECVD TiN film deposited in a dual frequency CCP plasma reactor can be tuned by adjusting the low frequency to high frequency power ratio, which modulates the ion energy in the discharge 41 . This regime thus allows gap filling of trenches or vias by PECVD [42][43][44] .…”

Low-temperature deposition of self-cleaning anatase TiO2 coatings on polymer glazing via sequential continuous and pulsed PECVD

“…Hence, several experimental investigations have been pursued to get a well-crystallized titania layer at low substrate temperature. Among them, we can cite few articles where process parameters such as the Ti precursor (Titanium tetrachloride TiCl4,Titanium tetraisopropoxide TTiP, Tetrakis(dimethylamido)titanium(IV) TDMAT, Titanium ethoxide Ti(OEt)4), precursor dilution [19,20], [21], plasma gas composition [22] (Ar, O2, H2, N2 and mixtures), plasma configuration (direct or remote [23]), excitation frequency [24] (Low frequency [25],…”