2023
DOI: 10.35848/1882-0786/acc0d3
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PEDOT:PSS-mediated semiconductor wafer bonding for built-in middle subcells in multijunction solar cells

Abstract: We propose and experimentally demonstrate a novel concept of semiconductor wafer bonding that simultaneously realizes bond formation and solar cell implementation. Firstly, a semiconductor bonding technique mediated by poly(3,4-ethylenedioxythiophene)—poly(styrenesulfonate) (PEDOT:PSS) is developed. By utilizing the PEDOT:PSS-mediated bonding, we subsequently fabricate an InP/Si heterostructure. The PEDOT:PSS/Si heterojunction derivatively formed at the bonded interface is then demonstrated to operate as a pho… Show more

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Cited by 4 publications
(3 citation statements)
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References 29 publications
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“…Theoretically, the maximum efficiency of a multijunction solar cell is 86%. Multi-junction (MJ, Tandem) III-V compound solar cells are have an efficiency of up to 50% and have potential applications in space and terrestrial fields [81,82].…”
Section: Third Generation Solar Cellmentioning
confidence: 99%
“…Theoretically, the maximum efficiency of a multijunction solar cell is 86%. Multi-junction (MJ, Tandem) III-V compound solar cells are have an efficiency of up to 50% and have potential applications in space and terrestrial fields [81,82].…”
Section: Third Generation Solar Cellmentioning
confidence: 99%
“…In the field of organic hole-conducting materials, poly (3,4-ethylenedioxythiophene):poly styrenesulfonate (PEDOT:PSS) has similarly gained a lot of interest. Whether it be used for new flexible or rigid perovskite cells [5][6][7] or in tandem and multijunction cells [8][9][10], PEDOT:PSS has multiple uses ranging from a transparent hole transport layer (HTL),…”
Section: Introductionmentioning
confidence: 99%
“…The PCE has improved rapidly over the last few years. [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] PEDOT:PSS, as a metalloid, forms Schottky junctions when in contact with n-type silicon (n-Si). [21][22][23] Its conductivity and interfacial properties with n-Si determine the hole collection characteristics of the device, which affect the efficiency of the photovoltaic performance.…”
Section: Introductionmentioning
confidence: 99%