Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates

Cederberg, J. G.; Waldrip, Karen Elizabeth; Peake, Gregory M.

doi:10.1016/j.jcrysgro.2004.08.055

Cited by 2 publications

(2 citation statements)

References 22 publications

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“…[18] The ACF of the In 0.83 Ga 0.17 As detector displayed random periodic oscillations with a relatively larger amplitude and peak-to-peak period, as shown in Figure 3f, owing to a shorter diffusion length of Ga ad-atoms with a larger activation energy for surface diffusion than that of In ad-atoms, resulting in a higher density of surface ledge steps and a rougher surface. [20,21] Figure 4a shows the temperature-dependent photoluminescence (PL) spectra of the InGaAs and InAsP detectors measured in the temperature range of 60-300 K. The energy bandgaps were plotted as a function of temperature, as shown in Figure 4b, to indicate bandgap narrowing with an increase in temperature due to electron-phonon interactions and lattice thermal expansion. [22] The temperature dependence of the fundamental bandgaps (E g ) was well fitted using the O'Donnell and Chen equation to account for the temperature-dependent electron-phonon coupling.…”

Section: Resultsmentioning

confidence: 99%

“…[ 18 ] The ACF of the In 0.83 Ga 0.17 As detector displayed random periodic oscillations with a relatively larger amplitude and peak‐to‐peak period, as shown in Figure 3f, owing to a shorter diffusion length of Ga ad‐atoms with a larger activation energy for surface diffusion than that of In ad‐atoms, resulting in a higher density of surface ledge steps and a rougher surface. [ 20,21 ]…”

Section: Resultsmentioning

confidence: 99%

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Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance

Park,

Kim,

Nguyen

et al. 2023

Adv Funct Materials

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Short‐wavelength infrared (SWIR) photodetectors are of great interest owing to their unique advantages of SWIR imaging such as better penetration ability and improved sensitivity that allow high‐resolution imaging. Commercially, extended InxGa1‐xAs heterojunction detectors with cut‐off wavelengths beyond λc = 1.7 µm are incorporated into SWIR imagers. However, their large dark current and limited cut‐off wavelength tunability prevent their widespread use in SWIR imaging. Herein, a novel InAs0.85P0.15 homojunction detector with λc = 2.6 µm is achieved through lattice and bandgap engineering with well‐designed InAsyP1‐y metamorphic buffers. Compared to conventional In0.83Ga0.17As/InP detectors with a lattice mismatch of f = 2.0%, the InAs0.85P0.15 detector with f = 2.7% exhibits full strain relaxation and lower surface roughness (2.4 nm due to its superior crystallinity). Photocarrier generation in the InAsP detector is more efficiently supported by a smaller entropy for electron–hole pair formation. The lower trap density and longer carrier lifetime of the InAsP detector decrease the dark current, leading to high uniform detectivities of ≈1.0 × 109 cm Hz1/2 W−1 over a wider voltage range at 300 K. Such an InAsP metamorphic detector with excellent photodetection capabilities is expected to find applications in the implementation of large‐format focal plane arrays for extended SWIR imaging.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance

Park,

Kim,

Nguyen

et al. 2023

Adv Funct Materials

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Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars

Bergamaschini

Bietti

Castellano

et al. 2016

Journal of Applied Physics

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Three-dimensional, epitaxial GaAs crystals are fabricated on micro-pillars patterned into Si(001) substrates by exploiting kinetically controlled growth conditions in Molecular Beam Epitaxy. The evolution of crystal morphology during growth is assessed by considering samples with increasing GaAs deposit thickness. Experimental results are interpreted by a kinetic growth model, which takes into account the fundamental aspects of the growth and mutual deposition flux shielding between neighboring crystals. Different substrate pattern geometries with dissimilar lateral sizes and periodicities of the Si micro-pillars are considered and self-similar crystal structures are recognized. It is demonstrated that the top faceting of the GaAs crystals is tunable, which can pave the way to locally engineer compound semiconductor quantum structures on Si(001) substrates.

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Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates

Cited by 2 publications

References 22 publications

Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance

Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance

Kinetic growth mode of epitaxial GaAs on Si(001) micro-pillars

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