Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator

Wei, Chia-Yu; Adriyanto, Feri; Lin, Yen-Sheng; Li, Yuchang; Huang, Tong-Jyun; Chou, Dei-Wei; Wang, Yeong-Her

doi:10.1109/led.2009.2029876

Cited by 44 publications

(6 citation statements)

References 17 publications

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“…As a basic unit, thin-film transistors (TFT) play an important role in displays [1][2][3][4][5], and the dielectric layer is the key for the TFT's electrical stability [6][7][8][9]. Due to their good transmittance, high dielectric constant and low temperature preparation, amorphous metal oxide dielectric layers have attracted widespread attention [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

et al. 2020

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In this paper, zirconium-aluminum-oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin-coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high-bond-energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal-insulator-metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al = 3:1 and an annealing temperature of 500 • C, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 × 10 −6 A/cm 2 @ 1 MV/cm. Furthermore, the indium-gallium-zinc oxide thin-film transistors (IGZO-TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm 2 /Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 × 10 6 on/off ratio were achieved at an annealing temperature of 500 • C.

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Section: Introductionmentioning

confidence: 99%

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

et al. 2020

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“…The RMS roughness for the room-temperature-processed HfON gate insulator evaluated from the AFM image is 0.54 nm. This is smaller than that of other high-k gate insulators 17,[19][20][21][22][23] and even comparable to that of polymer/high-k hybrid gate insulators, 19,23) indicating the excellent surface smoothness of the present HfON gate insulator. An AFM image of the pentacene film grown on the HfON gate insulator is shown in Fig.…”

Section: Resultsmentioning

confidence: 58%

Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors

Liao

Ishiwara

Ohmi

2012

Jpn. J. Appl. Phys.

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Low-voltage-operating pentacene-based organic field-effect transistors (OFETs) with different channel lengths have been fabricated by employing a room-temperature-processed HfON gate insulator. It was found that the on/off current ratio of the OFETs can be improved by decreasing the channel length. However, the hole mobility in the OFETs decreases with decreasing channel length owing to the effect of contact resistance. Interestingly, such OFETs with a short channel length (channel W/L = 500/50 µm) also show good electrical properties, such as a high hole mobility of 0.26 cm2 V-1 s-1, a low subthreshold swing of 0.13 V/decade, and a large on/off current ratio of 1×105 at an operating voltage of -2 V.

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“…The surface roughness of 5-nm-thick HfO 2 is indicated by the dotted line (rms: 0.19 nm), which is smaller than those of other high-k gate insulators and polymer/high-k stack gate insulators in spite of RT deposition. 17,[21][22][23][24][25][26] An rms surface roughness of 0.28 nm was observed for PVP deposited at RT, while it decreased to 0.11 nm for the PVP films deposited at 50-100 C.…”

Section: Resultsmentioning

confidence: 97%

Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO₂ Gate Insulator

Ohmi

Kamino

Ishiwara

2013

Jpn. J. Appl. Phys.

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Ultrathin poly(4-vinylphenol) (PVP) layer formation by evaporation was investigated for the first time to improve the pentacene/HfO2 interface characteristics in bottom-gate organic field-effect transistors (OFETs). 3–10-nm-thick PVP layers were successfully deposited by evaporation. It was found that the surface roughness of the PVP layer was remarkably decreased at the deposition temperatures of 50–100 °C both on SiO2 and HfO2 gate insulators. The obtained relative dielectric constants of the PVP layers deposited on SiO2 and HfO2 were 3.4 and 4.8, respectively. The mobility in the fabricated pentacene-based p-type OFETs with the HfO2 gate insulator was increased from 0.25 cm2 to 0.32 cm2 V-1 s-1 at the operation voltage of 2 V by the 5-nm-thick PVP interfacial layer deposited at 50 °C.

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Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator

Cited by 44 publications

References 17 publications

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors

Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO₂ Gate Insulator

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Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator

Cited by 44 publications

References 17 publications

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors

Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO2 Gate Insulator

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Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO₂ Gate Insulator