Pentacene thin film transistors on large area compatible gate dielectrics

Knipp, Dietmar; Street, R. A.

doi:10.1016/j.jnoncrysol.2004.03.049

Cited by 34 publications

(22 citation statements)

References 12 publications

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“…10.027 reported that larger grain size, and correlatively improved mobility, could be achieved by either decreasing the dielectric surface roughness or by modifying the pentacene deposition conditions and post-deposition treatments [4,17]. Moreover the use of polymeric dielectrics as polyvinylphenol (PVP) favors the formation of large grains, similarly to what obtained on smooth SiO 2 , which leads to enhanced performances [18]. However, some investigations reported improved electrical transport for reduced pentacene grain size when deposited on hydrophobic surface (h H 2 O > 90 ) as on octadecyltrichlorosilane (OTS) treated SiO 2 [4,19,20] or hydrophobic polymeric dielectric [13].…”

Section: Introductionmentioning

confidence: 99%

Growth related properties of pentacene thin film transistors with different gate dielectrics

Deman

Erouel

Lallemand

et al. 2008

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 99%

Growth related properties of pentacene thin film transistors with different gate dielectrics

Deman

Erouel

Lallemand

et al. 2008

Journal of Non-Crystalline Solids

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“…In order to reduce the density of grain boundaries, the active-layer deposition condition should be optimized to produce the grain size as large as possible, because the trapped charges at grain boundaries scatter the carrier transport and reduce the mobility [5]- [11]. Many materials are used as the SAM, such as cyanoethylpullulan (CYEPL) [12], polymethylmethacrylate (PMMA) [13], 2-Mercapto 5-nitrobenzimidazolem (MNB) [14], and octadecyltrichlorosilane (OTS) [15]. These materials generally made polycrystralline pentacene with large grain size and high structural order after treatment on dielectric, thus improving the mobility.…”

Section: Introductionmentioning

confidence: 99%

Organic thin-film transistors using pentacene and SiOC film

2006

IEEE Trans. Nanotechnology

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Pentacene for organic thin-film transistors (OTFTs) was deposited on the SiOC film by thermal evaporation. The transfer characteristic of the pentacene channel as the active layer is dependent on the chemical properties of a surface-on-gate insulator. Hybrid-type SiOC film can have all chemical properties from organic to inorganic properties according to the deposition condition. Pentacene on SiOC film shows the gradient or normal growth because of the C=C bond in SiOC film. Normal growth of pentacene molecules increased the grain size of the surface of pentacene on SiOC film, and the mobility of OTFTs on SiOC films prepared with an O 2 (BTMSM + O 2 ) flow rate ratio of 80% is 2.19 (cm 2 V ).

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“…We consider that the PCBM agglomerated nanostructure could favor the reduction of grain boundaries, which consequently have been linked to improve the device performances. In addition, the surface topography also reveals that the growth of the pentacene thin films highly depend on the interface with material under deposited film [18][19][20]. …”

Section: B Pentacene Thin Film Growthmentioning

confidence: 99%

Effect of [6,6]-Phenyl-C<inf>61</inf> butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors

Mohamad

Alias

Saad

et al. 2013

RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics

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The influence of [6,6]-phenyl C 61 -butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance of pentacene-based organic thin-film transistors (OTFTs) were reported. The presence of PCBM layers on a SiO 2 gate dielectric resulted in a good electrical characteristics of pentacene-based OTFTs, including a relatively high mobility ( = 0.95-2.2 cm 2 V -1 s -1 ), low threshold voltages (V th = -1.1--5.4 V), a high on/off current ratio (I on /I off = 10 4 ), and a high value of subthreshold slope (SS = 6.5 V/decade). The surface topography studies reveal that the PCBM nanostructure could favor the reduction of grain boundaries, which resulted in a better transistor performance of pentacene-based OTFTs. The influence of PCBM on the molecular microstructure of pentacene thin films elucidates a reasonable explanation for higher performance on OTFTs.

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Pentacene thin film transistors on large area compatible gate dielectrics

Cited by 34 publications

References 12 publications

Growth related properties of pentacene thin film transistors with different gate dielectrics

Growth related properties of pentacene thin film transistors with different gate dielectrics

Organic thin-film transistors using pentacene and SiOC film

Effect of [6,6]-Phenyl-C<inf>61</inf> butyric acid methyl ester (PCBM) agglomerated nanostructure on device performance in organic thin-film transistors

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