Two-dimensional (2D) layered lead
iodide (PbI2) is an
important precursor and common residual species during the synthesis
of lead–halide perovskites. There are currently debates and
uncertainties about the effect of excess PbI2 on the efficiency
and stability of the solar cell with respect to its energy alignment
and energetics of defects. Herein, by applying first-principles calculations,
we investigate the energetics, changes of work function, and defective
levels associated with the iodine vacancy (VI) and interstitial
iodine (II) defects of monolayer PbI2 (ML-PbI2). We find that PbI2 has very low formation energies
of VI of 0.77 and 0.19 eV for dilute and high concentrations,
respectively, reflecting the coalescence tendency of isolated VI. Similar to VI, a low formation energy of II of 0.65 eV is found, implying a high population of such defects.
Both defects generate in-gap defective levels which are mainly due
to the unsaturated chemical bonds of the p orbitals of exposed Pb
or inserted I. Such rich defective levels allow the VI and
II to be the reservoirs or sinks of electron/hole carriers
in PbI2. Our results suggest that the remnant PbI2 in perovskite MAPbI3 (or FAPbI3) play dual
opposite roles in affecting the efficiency of the perovskite: (1)
Forming a Schottky-type interface with MAPbI3 (or FAPbI3) in which the built-in potential would facilitate the electron–hole
separation and prolong the carrier lifetime; (2) acting as the recombination
centers due to the deep defective levels. To promote the efficiency
by the Schottky effect, our work reveals that the II defect
is favored, and to reduce the recombination centers, the VI defect should be suppressed. Our results provide a deep understanding
of the effects of defect engineering in ML-PbI2, which
shall be beneficial for the related optoelectronics applications.