Performance analysis of a clock generator PLL under TID effects

Rossetto, Alan Carlos Junior; Wirth, Gilson; Dallasen, Ricardo Vanni

doi:10.1109/latw.2014.6841921

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…With the continuous reduction in the feature size of integrated circuit devices and the rapid development of the aerospace industry, the phase-locked loop (PLL) operated in the radiation environment is seriously affected by the single-event effect, which cannot be ignored [1,2]. When high-energy particles act on the PLL, it will induce the singleevent effect, which will make the frequency and phase of the output signal of the PLL drift and cause the circuit system function to be abnormal [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

2023

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A voltage-controlled oscillator (VCO) is one of the key modules of the phase-locked loop (PLL) microsystem, and it is easy to bombard using high-energy particles in a radiation environment, resulting in the single-event effect. In order to improve the anti-radiation ability of the PLL microsystems used in the aerospace environment, a new voltage-controlled oscillator hardened circuit is proposed in this work. The circuit consists of delay cells with an unbiased differential series voltage switch logic structure with a tail current transistor. By reducing sensitive nodes and using the positive feedback of the loop, the recovery process of the VCO circuit to the single-event transient (SET) is reduced and accelerated, so as to reduce the sensitivity of the circuit to the single-event effect. The simulation results based on the SMIC 130 nm complementary metal–oxide–semiconductor (CMOS) process show that the maximum phase shift difference of the PLL with the hardened VCO is reduced by 53.5%, which shows that the hardened VCO structure can reduce the sensitivity of the PLL to the SET and improve the reliability of the PLL in the radiation environment.

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Section: Introductionmentioning

confidence: 99%

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

2023

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Source Switched Charge-Pump PLLs for High-Dose Radiation Environments

Prinzie

Biereigel

Kulis

et al. 2023

IEEE Trans. Nucl. Sci.

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This paper presents a radiation tolerant chargepump Phase-Locked Loop (PLL) with low static phase error variability suitable for high-performance clock systems in highdose radiation environments. We investigate the use of source switching charge-pump architectures to minimize any voltageor dose-dependent charge injection and address the limitations of Enclosed Layout Transistors (ELTs) in the conventional drain switched charge-pump . The circuit has been processed in a 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology and has been experimentally verified with X-rays up to a total ionizing dose of 180 Mrad.

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Performance analysis of a clock generator PLL under TID effects

Cited by 2 publications

References 16 publications

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

A Single-Event-Hardened Scheme for Ring Oscillator Applied to Radiation-Resistant PLL Microsystems

Source Switched Charge-Pump PLLs for High-Dose Radiation Environments

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