Performance Analysis of Cntfet and Mosfet Focusing Channel Length, Carrier Mobility and Ballistic Conduction in High Speed Switching

Kabir, Md. Alamgir; Nandy, Turja; Haque, Mohammad Aminul; Dutta, Arin; Mahmood, Zahid

doi:10.14810/ijamse.2014.3401

Cited by 15 publications

(7 citation statements)

References 28 publications

(33 reference statements)

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“…However, the key benefit of the use of a random SWCNT network as presented in this study is the transistor’s improved performance in terms of on-current, on/off ratio, and transconductance [ 38 ]. Furthermore, a large channel length would produce a good device since it is easier, requires a lower cost, and produces faster than the smaller channel device [ 39 ].…”

Section: Resultsmentioning

confidence: 99%

SWCNT Network-FET Device for Human Serum Albumin Detection

Yahya

Hassan

Maidin

et al. 2022

Sensors

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A thin film of single-walled carbon nanotube (SWCNT) network field-effect transistor (FET) was fabricated by a simple, fast, and reliable deposition method for electronic applications. This study aims to develop a method for fabricating a thin film of random SWCNTs to be used as a transducer to detect human serum albumin (HSA) in biosensor applications. The random SWCNT network was deposited using the airbrush technique. The morphology of the CNT network was examined by utilising atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), while electrical characteristics were analysed using three-terminal IV measurements. The thin film (SWCNT network) was applied as a transducer to detect human serum albumin (HSA) based on its covalent interaction with antibodies. HSA plays a significant part in the physiological functions of the human body. The surface alteration of the SWCNTs was verified using Fourier transform infrared (FTIR) spectroscopy. Electrical current–voltage measurements validated the surface binding and HSA detection. The biosensor linearly recorded a 0.47 fg/mL limit of detection (LOD) and a high sensitivity of 3.44 μA.(g/mL)−1 between 1 fg/mL and 10 pg/mL. This device can also be used to identify a genuine HSA despite interference from other biomolecules (i.e., bovine serum albumin (BSA)), thus demonstrating the random SWCNT-FET immunosensor ability to quantify HSA in a complex biological environment.

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Section: Resultsmentioning

confidence: 99%

SWCNT Network-FET Device for Human Serum Albumin Detection

Yahya

Hassan

Maidin

et al. 2022

Sensors

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“…Even though same amount of CNTs on channel length, electrical output is different due to tube-tube junction resistance. In other words, a result based on numbers of junctions or level of CNTs tube bundling [30]. It means that the uniform CNTs morphology (ie.…”

Section: Electrical Measurementmentioning

confidence: 99%

Morphology and Electrical Characteristics of Single-Walled Carbon Nanotubes Film Prepared by Air Brush Technique

Hassan

Mohamed

Kunaraj

et al. 2022

IJIE

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This study is to investigate the morphology and electrical characteristics of single-wall carbon nanotubes (SWCNTs) thin film deposition using air brush technique. A deposition setup consisting of a conventional artist air brush was developed and used to deposit SWCNT thin films and therefore the resulting film’s characteristics need to be investigated to gauge its suitability in producing uniform monolayer. The SWCNTs used were synthesized via Direct Injection Pyrolytic Synthesis (DIPS) method, with diameters ranging from 0.8 to 3 nm. The substrate was deposited using an airbrush with varying nozzle to study its effect to the resulting SWCNTs thin films’ characteristics. Subsequently, scanning electron microscope (SEM) were used to inspect the morphology and surface topography, and followed by preliminary electrical measurements. The result shows that good dispersion promotes uniform distribution of SWCNTs over large area of glass substrate. Moreover, the electrical measurement revealed that at 1 V, best morphology produced highest current at a nozzle distanceof 10 mm (15.3 μA) and the lowest current at a nozzle height of 4 mm (3.24 μA). From the results presented, it is demonstrated that conventional artist airbrush setup can be effectively used to deposit monolayer thin film of SWCNT with high degree of uniformity. This research is necessary for the process of depositing-controlled CNT thin film network, which can influence the material characteristics and performance of the variety of CNT-based device applications.

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“…Utilizing different adder implementations can improve device performance and boost the performance of digital circuits [14]. There are several full adder implementations that have been published that aim to increase performance, such as conventional complementary metal oxide semiconductors (C-CMOS) and transmission gate array (TGA) [15], transmission function array (TFA) [16], transmission gate array (TGA) [17], complementary pass transistor logic (CPL-TG) [18], full mirror adder SERF [19], 13A full adder [20], static energy recovery full adder [21], static CMOS output device and hybrid pass transistor logic (HPSC) levelrestoring, complementary, and new-(HPSC) carry logic (CLRCL) [22], double pass transistor logic [23], and hybrid CMOS logic with transmission gate logic (HCTG) [24], removed single driving full adder (RSD-FA) [25], 18 transistor 1-bit full adder (18T-FA) [26], hybrid multi threshold fault adder (HMTFA) [27], and carbon nanotube full adder (CNTAFS) [27].…”

Section: Introductionmentioning

confidence: 99%

A low-power high speed full adder cell using carbon nanotube field effect transistors

Reddy Eamani,

Nallathambi,

Asaithambi

2023

IJEECS

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The adder circuit is basic component of arithmetic logic design and that is the most important block of processor architecture. Moreover, power consumption is the main concern for real-time digital systems. In recent times, carbon nanotube field effect transistors (CNTFET) used for arithmetic circuit designs with high performance. A creative substitute for highspeed, less power, and small size in area designs is the CNTFET. This paper presents 1- bit full adder with CNTFETs for low power and high performance. Using the computer aided design (CAD) tool the proposed 1-bit full adder design model is simulated using 32 nm with CNTFET technology, a voltage supply of +0.9V. Performance comparisons between various proposed designs and existing 1-bit full adder design have been made in terms of the delay, power, and power delay product (PDP). The proposed CNFET logic also design for n-bit carry look adder (CLA) and compare it to other CLAs to evaluate performance and reliability. The simulation results shows that the proposed adder consume less power than existing adders.

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Performance Analysis of Cntfet and Mosfet Focusing Channel Length, Carrier Mobility and Ballistic Conduction in High Speed Switching

Cited by 15 publications

References 28 publications

SWCNT Network-FET Device for Human Serum Albumin Detection

SWCNT Network-FET Device for Human Serum Albumin Detection

Morphology and Electrical Characteristics of Single-Walled Carbon Nanotubes Film Prepared by Air Brush Technique

A low-power high speed full adder cell using carbon nanotube field effect transistors

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