Performance analysis of Cu/CNT-based TSV: impact on crosstalk and power

Abstract

This paper presents the first realistic and holistic approach to exhibit compact resistance-inductance-capacitanceconductance (RLCG) model for (Carbon nanotube) CNT and Cu based different shaped through-silicon vias (TSVs) in 3-D ICs. The model primarily comprises the effect of bump, inter-metal dielectric, and eddy currents. Using the proposed model, a mathematical formulation for the coaxial, cylindrical, and tapered based via parasitics are derived using the concept of partial inductance, sectioning via laterally into infinitesimally thin slices and triangular inter-tube assemblage, respectively. The analytical model is validated against a fabrication based experimental results and subsequently employed for crosstalk induced delay, peak noise, and power losses analysis. Additionally, for the further validation, the S parameter for the Pi-based model is derived, and compared with an electromagnetic simulator to benchmark the proposed model. The tremendous consistency between the analytical and EM simulation based results further evidences the validity of the proposed model. Encouragingly, a significant improvement in the power losses, crosstalk, and peak noise can be observed using the CNT-based tapered TSV compared to the Cu-based via structures. Additionally, it is shown that the irrespective of via height, the average crosstalk induced delay, peak noise, signal transmission, and reflection loss of the TSV with tapered shaped 15-shell CNT bundle is reduced by 22.82%, 27.80%, 47.63%, and 33.71%, respectively compared to the Cu. KeywordsCrosstalk-induced delay • Eddy effect • Single-Walled Carbon nanotube (CNT) • 3-D IC • Mean-time-to-failure (MTTF) • resistance-inductance-capacitance-conductance (RLCG) model • Through-silicon via (TSV).

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

“…Recent researchers have focused on adding NPs in Cu-filling material to reduce the CTE mismatch and residual stresses between the Cu-filling and Si wafer. The CNTs have been used as a viable choice because of their excellent mechanical and electrical conductivity at the nanoscale [157]. Remarkably, compared to 72.9% for copper alone, the electrical resistance of a Cu-CNT composite is just 57.3%, according to Sable et al [158].…”

Impact of Interfacial Crack on Redistribution Layer of TSV based 3D Integration

“…Higher insertion and reflection losses can lead to a decrease in signal power and range, eventually constraining the performance of the system [20][21].…”