Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies

Abstract

Advancement in the semiconductor industry has transformed modern society. A miniaturization of a silicon transistor is continuing following Moore?s empirical law. The planar metal-oxide semiconductor field effect transistor (MOSFET) structure has reached its limit in terms of technological node reduction. To ensure the continuation of CMOS scaling and to overcome the Short Channel Effect (SCE) issues, a new MOS structure known as Fin field-effect transistor (FinFET) has been introduced and has led to significant performance enhancements. This paper presents a comparative study of CMOS gates designed with FinFET 10 nm, 7 nm and 5 nm technology nodes. Electrical parameters like the maximum switching current ION, the leakage current IOFF, and the performance ratio ION/IOFF for N and P FinFET with different nodes are presented in this simulation. The aim and the novelty of this paper is to extract the operating frequency for CMOS circuits using Quantum and Stress effects implemented in the Spice parameters on the latest Microwind software. The simulation results show a fitting with experimental data for FinFET N and P 10 nm strctures using quantum correction. Finally, we have demonstrate that FinFET 5 nm can reach a minimum time delay of td=1.4 ps for CMOS NOT gate and td=1 ps for CMOS NOR gate to improve Integrated Circuits IC.

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

“…Throughout the years, the investigation of NBTI has attracted significant aca attention, as proven by the group of authors who have contributed to this field [1 NBTI is investigated across a spectrum of semiconductor components, including Fin integrated circuits (ICs), where the effect can impact the reliability and performa digital and analog circuits. Of particular relevance to this review were power VD transistors [16][17][18]. Several experimental methods have been developed to obtain a priate experimental data [15,21].…”

“…Throughout the years, the investigation of NBTI has attracted significant academic attention, as proven by the group of authors who have contributed to this field [15][16][17][18][19][20][21]. NBTI is investigated across a spectrum of semiconductor components, including FinFETs, integrated circuits (ICs), where the effect can impact the reliability and performance of digital and analog circuits.…”

“…NBTI is investigated across a spectrum of semiconductor components, including FinFETs, integrated circuits (ICs), where the effect can impact the reliability and performance of digital and analog circuits. Of particular relevance to this review were power VDMOS transistors [16][17][18]. Several experimental methods have been developed to obtain appropriate experimental data [15,21].…”