2020 Ieee Vlsi Device Circuit and System (Vlsi Dcs) 2020
DOI: 10.1109/vlsidcs47293.2020.9179854
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Performance Analysis of Ni3GeFe2 / Fe3GeTe2 Composites as Ferromagnetic Layer in MTJ Memory Devices

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Cited by 3 publications
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“…Among the different types of nanomaterials, Fe 3 O 4 is widely used in spintronic applications owing to its half-metallic nature and high polarization at room temperature (27 • C) [49]. Magnetic materials are The band gap between the conduction and valence bands is defined as the energy band gap in the MTJ [50]. Moreover, the conduction band consists of free electrons, which are responsible for current conduction, and the valence band consists of holes.…”
Section: Design Of Mos 2 -Mtjmentioning
confidence: 99%
“…Among the different types of nanomaterials, Fe 3 O 4 is widely used in spintronic applications owing to its half-metallic nature and high polarization at room temperature (27 • C) [49]. Magnetic materials are The band gap between the conduction and valence bands is defined as the energy band gap in the MTJ [50]. Moreover, the conduction band consists of free electrons, which are responsible for current conduction, and the valence band consists of holes.…”
Section: Design Of Mos 2 -Mtjmentioning
confidence: 99%