Performance analysis of organic transistor using different materials for source and drain electrodes

Lakhera, P.; Baliga, A. K.; Negi, Shubham; Mittal, Poornima; Kumar, Brijesh; Sundriyal, Shashank

doi:10.1109/ngct.2015.7375083

Cited by 3 publications

(1 citation statement)

References 17 publications

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“…162 Typical contact resistance (R c ) values for OTFTs are usually larger than 10 2 Ω cm, in contrast to Si-based metal oxide semiconductor FETs (MOSFETs) with Rc less than 0.1 Ω cm. 159,163 The contact resistance effect on charge carrier injection into the device can be minimized by improving the adhesion property of metals, 164 matching work function with the HOMO level of organic semiconductor, 165 inserting oxide film between the metal electrodes and organic semiconductor, 166 self-assembled monolayer (SAM) on metal electrodes, 153 solvent vapors annealing (SVA) on metal electrode, 160 and tune the morphology of the organic semiconductor. 167 For bottom gate-top contact configuration, Au atoms, for example, tend to diffuse into the polymer matrix, thereby resulting in increased intrachain disorder on the polymer chains near the interface.…”

Section: Limited To Conjugated Polymers 77mentioning

confidence: 99%

Review—Charge Carrier Mobility of Organic Thin Film Transistor: Intrinsic and Extrinsic Influencing Factors Based on Organic Semiconducting Materials

Wahab

Abdulhameed²,

Ismail

et al. 2023

ECS J. Solid State Sci. Technol.

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The use of organic thin film transistors (OTFTs) is growing rapidly as an alternative to their inorganic counterparts due to their advantageous properties, such as easy processing and flexibility. The performance of OTFTs is still undergoing improvement and taking this as a recognition, this paper reviews various factors that influence the performance of the OTFTs, primarily in terms of field-effect mobility. The influencing factors reviewed in this article are divided into intrinsic and extrinsic factors for different organic semiconducting materials (OSMs). The intrinsic factors include the OSMs’ molecular orientation, OSM/dielectric interaction, and OSM/electrode interaction. The extrinsic factors are basically related to the OSM processing and OTFTs fabrication. For example, the article discusses how mixing, blending, and annealing affect the properties of the OSMs. The effect of the ambient atmosphere on OTFTs’ performance is also discussed. The aim of this article is to discuss the current trends related to one of the critical figures of merit of OTFTs, which is the mobility of charge carriers.

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