Performance analysis of parallel array of nanowires and a nanosheet in SG, DG and GAA FETs

Darbandy, Ghader; Mothes, Sven; Schröter, M.; Kloes, Alexander; Claus, Martin

doi:10.1016/j.sse.2019.107641

Cited by 6 publications

(9 citation statements)

References 23 publications

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“…6a, which results in a smaller charge required for carrying the same drain current. A similar effect has been observed in nanowire FETs [19]. In addition, as compared to a top gate, the buried gate has a better channel control over the adjacent tube surface in particular in the spacer region where the field lines from the gate do not have to compete against those from the vertical source metal surface.…”

Section: Comparison Of Unit Cell Resultssupporting

confidence: 65%

Device design and optimization of CNTFETs for high-frequency applications

et al. 2021

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Carbon nanotube (CNT) field-effect transistors (FETs) have recently reached high-frequency (HF) performance similar to that of silicon RF-CMOS at the same gate length despite a tube density and current per tube that are far from the physical limits and suboptimal device architecture. This work reports on an investigation of the optimal device design for practical HF applications in terms of cut-off frequencies, power gain, and linearity. Different fundamental designs in the gate contact arrangement are considered based on a 3D device simulation of both CNTs and contacts. First, unit cells with a single CNT and minimal contact sizes are compared. The resulting simulation data are then extended toward a structure with two gate fingers and realistic contact sizes. Corresponding parasitic capacitances, as well as series and contact resistances, have been included for obtaining realistic characteristics and figures of merit that can be used for comparison with corresponding silicon RF MOSFETs. Finally, a sensitivity analysis of the device architecture with the highest performance is performed in order to find the optimal device design space.

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Section: Comparison Of Unit Cell Resultssupporting

confidence: 65%

Device design and optimization of CNTFETs for high-frequency applications

et al. 2021

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“…The extrinsic transit frequency f T-Ex for an OPBT can be defined as follows, taking into account the impact of external parasitic capacitance: [28]…”

Section: Transit Frequency F T At Fixed D Phmentioning

confidence: 99%

High‐Frequency f_T and f_max in Organic Transistors: Performance and Perspective

Darbandy,

Pashaki,

Roemer

et al. 2024

Adv Elect Materials

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In state‐of‐the‐art organic transistors, the transit frequency fT is reported to be fT = 40 MHz for vertical organic transistors, where a voltage‐normalized fT corresponds to 0.36 MHz V−2. The reported highest fT for conventional organic transistors is fT = 160 MHz, where the voltage‐normalized fT is 0.1 MHz V−2. While the reported transit frequency fT of n‐MOSFETs for silicon technology when normalized by the applied biases exceeds 300 GHz V−2. The reported carrier mobility of organic semiconductors is over 100 cm2 V−1 s−1, which is almost an order of magnitude lower than that of silicon. However, the transit frequency fT of organic transistors lags far behind silicon technology by about six orders of magnitude at a comparable device length below 300 nm. In this work, a technology computer‐aided design (TCAD) simulator is adjusted to the experimental DC and AC characteristics of the 200 nm device length vertical organic permeable‐base transistors (OPBTs) based on C60 as semiconductor. The AC performance of the devices is investigated and quantitatively analyzed the influence and contribution of key design, structure and material parameters that determine fT and fmax. The feasible ways to enhance and optimize the highest achievable fT and fmax are identified to reach the and overcome the limitations to high‐frequency operation in organic transistors.

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“…A phenomenological analysis of the transport in multi-1D-channel devices is given next by considering that (i) screening effects due to tube/wire interactions are negligible and (ii) there are not Schottky points within the channel. The first can be fulfilled in devices with a relaxed pitch [14][15][16] whereas the latter is achieved in devices with tubes/wires properly aligned, a technology condition achievable for both CNTFET 31 and NWFET 32 technologies.…”

Section: Transport Injection Mechanisms and 1d-lbm In Multi-1d Fetsmentioning

confidence: 99%

“…In contrast to single-1D-channel devices, multi-tube (MT) or multi-wire (MW) transistors present improved overall device characteristics, e.g., higher driving current capabilities and dynamic figures of merit [10][11][12][13][14][15][16] . However, discussions on transport and injection phenomena in 1D…”

Section: Introductionmentioning

confidence: 99%

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Pacheco‐Sanchez

Torrent

Jiménez

2022

Journal of Applied Physics

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The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors is evaluated across different carbon nanotube and nanowire device technologies by means of a Landauer–Büttiker-based extraction methodology (LBM) adapted for multiple 1D-channels. The extraction methodology yields values for an effective Schottky barrier height and a gate coupling coefficient, an indicator of the device working at the quantum capacitance limit. The novel LBM-based approach embracing the mechanisms in 1D electronics is compared to the conventional activation energy method not considering such effects. The latter approach underestimates the potential barrier height at metal–channel interfaces in comparison to the novel methodology. A test structure based on a displaced gate device is proposed based on numerical device simulation results toward an improved accuracy of the method.

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Performance analysis of parallel array of nanowires and a nanosheet in SG, DG and GAA FETs

Cited by 6 publications

References 23 publications

Device design and optimization of CNTFETs for high-frequency applications

Device design and optimization of CNTFETs for high-frequency applications

High‐Frequency f_T and f_max in Organic Transistors: Performance and Perspective

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

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Performance analysis of parallel array of nanowires and a nanosheet in SG, DG and GAA FETs

Cited by 6 publications

References 23 publications

Device design and optimization of CNTFETs for high-frequency applications

Device design and optimization of CNTFETs for high-frequency applications

High‐Frequency fT and fmax in Organic Transistors: Performance and Perspective

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

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High‐Frequency f_T and f_max in Organic Transistors: Performance and Perspective