Performance analysis of thermally bonded Er3+, Yb3+:glass/Co2+:MgAl2O4 microchip lasers

Abstract

The new glass as well as Co 2? :MgAl 2 O 4 saturable absorber synthesis, especially developed for thermal bonding, was described. The procedure of thermal bonding was presented. Generation parameters of continuous wave operation at 1.5 lm wavelength were shown. The threshold below 180 mW and slop efficiency over 10 % was reached. Pulse generation in thermally bonded and unbonded as well as monolithic Er 3? , Yb 3?:-glass/Co 2? :MgAl 2 O 4 microchip lasers was compered. The peak power above 10 kW with pulse energy above 32 lJ and pulse width 3.2 ns was achieved.

Er 3+ ,Yb 3+ :glass-Co 2+ :MgAl 2 O 4 diffusion bonded passively Q-switched laser

“…Jiang used an alumina-rich spinel (Mg 0.4 Al 2.4 O 4 ) as passive Q-switcher in Er:Yb:glass laser, and obtained a laser output with a pulse energy of 4.8 µJ and a pulse width of 3.5 ns in 2011. [14] Mlynczak and Belghachem, [15] and Mlynczak et al [16] used diffusion bond technique with an Er:Yb:glass and a Co 2+ :MgAl 2 O 4 to form a monolithic microchip, and they achieved an output with pulse energy above 32 µJ and pulse width 3.2 ns in the monolithic microchip laser in 2015. Recently, Kigre Inc. presented the MK-2 HEEP microlaser platform, and thereby obtained a pulse energy of 0.2 mJ, corresponding to 5 ns pulse width.…”

“…Furthermore, the length of the cavity is restricted by the arrangement of the active material and the saturable absorber, causing a difficulty in shortening pulse. A diffusion bonded Er:Yb:glass/Co 2+ :MgAl 2 O 4 microchip laser presented by Mlynczak et al [15,16] is a way to avoid the disadvantages caused by the separation configuration. However, the pump source wavelength in the microchip laser was 975 nm.…”