Performance and application of heavy ion nuclear microbeam facility at the Nuclear Physics Institute in Řež, Czech Republic

Abstract

The Tandetron Laboratory of the Nuclear Physics Institute of the Czech Academy of Sciences is equipped with five beam lines associated with a 3 MV tandem electrostatic accelerator model 4130 MC from High Voltage Engineering Europa B.V. This accelerator is coupled with two duoplasmatron sources and a single sputter ion source and provides ions from hydrogen to gold. One of these lines is a nuclear microbeam facility, utilizing ion beams of micro- and sub-micro sizes for materials research by use of particle induced x-ray emission spectroscopy, particle induced gamma emission, Rutherford back-scattering spectroscopy, and scanning transmission ion microscopy methods as well as for ion beam writing. The major advantage of the presented microprobe is a possibility of 3D structure creation not only in polymer materials using light ions but also in other materials such as glass, ceramics, etc. by use of heavy ions. The focusing system allows focusing of charged particles with a maximum rigidity of 11 MeV amu/q2. The usual resolution in high and low current modes is 2 × 3 µm2 for a 100 pA and 0.3 × 0.5 µm2 for the 2000 ions/s of 2 MeV protons, respectively. A detailed facility description is given in the paper. The applications of focused beams of heavy ions as well as examples of light ions utilizing are also presented in the article.

Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

“…The as-deposited film was irradiated at the Tandetron Laboratory of the Nuclear Physics Institute of the Czech Academy of Sciences employing a 3 MV Tandetron MC 4130 accelerator [17] to induce radiation damage using Si 2+ ions with an energy of 5 MeV at room temperature. A fluence of 2x10 16 ions/cm 2 was achieved, with a beam current density of 168-279 nA/cm 2 on the target and an irradiation time of 8 hours.…”

The influence of Au‐nanoparticles presence in PDMS on microstructures creation by ion beam lithography

“…Ion beam lithography is performed at Rez microprobe 9 with focused 2 MeV He 2+ and 10 MeV O 4+ . Such beams have the same penetration depth of 12 and 11.7 μm in PDMS, respectively, but their linear energy transfer (LET) is different by a factor up to six (Figure 1).…”

Efficient Optical Waveguiding Enabled by Focused Proton Beam Writing in Nd:YCOB Crystal

“…However, such embedded waveguides (with structurally asymmetric air-dielectric interfaces) are incompatible with 3D photonic designs supporting symmetric refractive index profiles. In contrast to conventional ion implantation/irradiation, the proton beam writing (PBW) technique involves scanning of a focused beam of high-energy (MeV) protons for localized material modification at micron or submicron metric scales [11][12][13][14][15][16]. This feature makes PBW very suitable for direct 3D micromachining of dielectric waveguides with flexible geometries without masking the substrate [9].…”