Performance and characteristics of a new scintillator

Czirr, J.B.; MacGillivray, Glen M.; MacGillivray, R.R; Seddon, P.J

doi:10.1016/s0168-9002(98)01295-9

Cited by 92 publications

(50 citation statements)

References 3 publications

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“…Because of this, LGBO has a great potential in neutron imaging. Czirr et al [9] reported on the development of a promising thermal neutron scintillator on the basis of LGBO:Ce that can be optimized for specific purposes, in particular, for the exothermic neutron detection. The Ce 3 þ rareearth ions are widely used as an optically active dopant in modern scintillation detectors and converters of ionizing radiation based on inorganic optical crystals.…”

Section: Introductionmentioning

confidence: 99%

Luminescence of Li6Gd(BO3)3 crystals upon ultraviolet and inner-shell excitations

Огородников¹,

Пустоваров²

2013

Journal of Luminescence

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a b s t r a c tThe paper presents the results of the study on luminescence and electronic excitations in Li 6 Gd(BO 3 ) 3 single crystals. The optical and luminescence spectroscopy with a sub-nanosecond time resolution upon selective photoexcitation in the energy range from 3.0 to 650 eV was used to investigate in detail the luminescence of both the Gd 3 þ host ions and Ce 3 þ impurity ions as well as the processes of energy transfer between them. The intrinsic ultraviolet emission at 3.95-3.97 eV due to 6 P j -8 S 7=2 transitions in the Gd 3 þ host ion and the fast luminescence at 2.8-3.0 eV due to 5d-4f 1 dipole-allowed transitions in the Ce 3 þ impurity ion were studied upon excitations through the intracenter, charge transfer, bandto-band, and inner-shell transitions. The specificity of the energy transfer upon excitation of photoluminescence in the energy range of absorption of the inner shells of different atoms of the crystal, as well as in the energy region of the giant resonance of 4d-4f transitions was revealed. On the basis of the experimental data, the bandgap E g ¼9.3 eV, the minimum energy of the 5d-4f 1 and charge transfer transitions were determined. The expected positions of the ground states of the 4f n and 4f nÀ1 5d levels of trivalent lanthanide ions as well as the 4f n þ 1 and 4f n 5d levels of divalent ions were calculated for all the lanthanide ions in Li 6 Gd(BO 3 ) 3 host crystal.

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Section: Introductionmentioning

confidence: 99%

Luminescence of Li6Gd(BO3)3 crystals upon ultraviolet and inner-shell excitations

Огородников¹,

Пустоваров²

2013

Journal of Luminescence

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“…A most commonly used gas tube as the neutron detector is not suitable for imaging devices due to its low spatial resolution. Scintillators and semiconductor detectors are more effective as thermal neutron detectors for imaging devices, because fast response time and high resolution can be achieved [3][4][5][6][7][8][9]. However, they are sensitive to both neutron and gamma ray.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor Thermal Neutron Detector

Aoki

Miyake

Nakano

et al. 2014

MST

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The CdTe and GaN detector with a Gd converter have been developed and investigated as a neutron detector for neutron imaging. The fabricated Gd/CdTe detector with the 25 mm thick Gd was designed on the basis of simulation results of thermal neutron detection efficiency and spatial resolution. The Gd/CdTe detector shows the detection of neutron capture gamma ray emission in the 155 Gd(n, g) 156 Gd, 157 Gd(n, g) 158 Gd and 113 Cd(n, g) 114 Cd reactions and characteristic X-ray emissions due to conversion-electrons generated inside the Gd film. The observed efficient thermal neutron detection with the Gd/CdTe detector shows its promise in neutron radiography application. Moreover, a BGaN detector has also investigated to separate neutron signal from gamma-ray clearly. AbstrakDetektor Neutron Termal Semikonduktor. Detektor CdTe dan GaN dengan konverter Gd telah dikembangkan dan diteliti sebagai detektor neutron yang digunakan dalam pencitraan neutron. Detektor Gd/CdTe yang dibuat dengan Gd setebal 25 mm itu dirancang berdasarkan hasil simulasi efisiensi pendeteksian dan resolusi spasial neutron termal. Detektor Gd/CdTe menunjukkan adanya pendeteksian neutron yang menangkap emisi sinar gamma dalam reaksi-reaksi 155 Gd(n, g) 156 Gd, 157 Gd(n, g) 158 Gd, dan 113 Cd(n, g) 114 Cd dan emisi sinar-X yang khas sebagai akibat dari dihasilkannya elektron-elektron konversi dalam film Gd. Dalam aplikasi radiografi neutron, pendeteksian dengan detektor Gd/CdTe yang efisien terhadap neutron termal yang diteliti merupakan temuan yang menjanjikan. Selain itu, diselidiki juga bahwa detektor BGaN dapat memisahkan sinyal neutron dan sinar gamma dengan jelas.

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“…We have reported the diode characteristics and the first results of scintillation light readout obtained with these diodes in combination with several scintillator materials for -ray detection in [1] and [2]. Recently, we have filled the wells with a powder of Li Gd(BO ) (Ce ) enriched in Li and using separated Gd for neutron detection [3]. In the following, we report the first results obtained with a thermal neutron beam of the nuclear reactor of the Delft University.…”

Section: Introductionmentioning

confidence: 99%

Thin photodiodes for a neutron scintillator silicon-well detector

Allier

Hollander

Eijk

et al. 2001

IEEE Trans. Nucl. Sci.

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Abstract-In the development of new neutron imaging applications, it is crucial to achieve a detector combining high spatial resolution, fast response, and high detection efficiency. To achieve such features, we have proposed a new design for position sensitive radiation sensors, which we called the micromachined Si-well scintillator pixel detector. It consists of an array of scintillator crystals encapsulated in silicon wells with photodiodes at the bottom. In the following, we describe such a detector, which makes use of a powder of 6 Li 158 6 Gd(BO 3 ) 3 (Ce 3+ ). The first experiments obtained with a prototype detector using a thermal neutron beam show the presence of a signal above the detector noise tail. In addition, to improve the characteristics of the well-type silicon sensor, we have investigated the deep reactive ion etching on silicon-on-insulator wafers. The process to etch 700-m-wide vertical wells into a 500-m-thick silicon wafer has been optimized. Test detectors with 10-m-thick photodiodes at the bottom have been fabricated by means of this process.

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Performance and characteristics of a new scintillator

Cited by 92 publications

References 3 publications

Luminescence of Li6Gd(BO3)3 crystals upon ultraviolet and inner-shell excitations

Luminescence of Li6Gd(BO3)3 crystals upon ultraviolet and inner-shell excitations

Semiconductor Thermal Neutron Detector

Thin photodiodes for a neutron scintillator silicon-well detector

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