Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures

Vetury, R.; Shealy, J.B.; Green, D.S.; McKenna, J.; Brown, Jacqueline; Gibb, Shawn R.; Leverich, K.; Garber, P.; Poulton, Matthew

doi:10.1109/mwsym.2006.249733

Cited by 11 publications

(7 citation statements)

References 9 publications

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“…Combining with previous literature reports, we believe the mechanism of GaN HEMT burnout is the reverse breakdown of gate-drain junction. In order to restrain this degradation and failure, the Fe-C co-doped buffer layer, the thinner barrier layer and the optimized gate structure can be used [40]- [42]. Related analysis methods and mechanism analysis help to improve the survivability of GaN HEMTs under overstress.…”

Section: Discussionmentioning

confidence: 99%

RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

Liu

Chen

et al. 2023

IEEE J. Electron Devices Soc.

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In this work, a new method for failure analysis of electronic components, high speed camera, is used to investigate burnout failure location of GaN HEMTs under RF overdrive stress. Based on the high speed camera system and the RF test system, we can filter out most of the burn flashes, and clearly locate the weak parts of devices. To further explain the burnout mechanism, a long-term (100 h) RF overdrive stress experiment was carried out and the significant degradation was observed. The drain-source current decreases and the threshold voltage drifts forward. These phenomena show that the degradation of RF overdrive stress is based on hot electron effect (HEE), which is related to the electric field. Besides, Electroluminescence (EL) tests are used and the non-uniform but strong luminescence characteristics of the gate were found, which indicates the strong electric field is the main cause of burnout. We also explore the correlation between burnout and ambient temperature. It was found that the influence of ambient temperature on the burnout was limited. At last, a TCAD simulation is carried out to confirm the temperature and electric field distribution in the device when burnout. It can be found that the electric field inside the device exceeded the breakdown electric field of GaN, which further proves that the burnout caused by RF overdrive is mainly due to electric field rather than temperature.

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Section: Discussionmentioning

confidence: 99%

RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

Liu

Chen

et al. 2023

IEEE J. Electron Devices Soc.

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“…The GaN-based devices offer excellent superiority in highpower and high-frequency technologies because of their capability to deliver high power densities at both microwave and millimeter-wave (mmW) frequencies along with high electron saturation velocities [1][2][3][4][5][6][7][8][9][10][11]. For GaN-based RF power devices, SiC is usually preferable owing to high thermal conductivity, high electrical resistivity, and very low mismatch to GaN [12][13][14][15]. However, SiC substrates are expensive and unavailable in large size wafers, which limits the cost-effective scaling of the technology [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si

Bose

Biswas

Hishiki

et al. 2022

IEICE Electron. Express

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We report the effect of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si (LR-Si). Microstrip lines of finite length and width with ground pads were fabricated on three GaN-on-3C-SiC/LR-Si epitaxial structures with varying nitride layer thicknesses of 3.2, 5.3, and 8.0 𝜇m. The loss performance of microstrip lines on different substrates was evaluated in the frequency range of 0.1 to 9 GHz. The sample with 8.0 𝜇m thick nitride layer showed a minimal loss of 0.3 dB/mm at 9 GHz compared to the other samples. The evaluated data from electromagnetic (EM) simulation also confirmed a decreasing trend of loss with increasing nitride layer thickness. Temperature dependent loss evaluation also verified the above fact.

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“…of the gate control [9]. Therefore, GaN embedded nanotube FET exhibits exceptional electrical performance, of which subthreshold characteristics are better than Si nanotube FET.…”

Section: Introductionmentioning

confidence: 99%

GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications

Han

Deng

et al. 2020

IEEE J. Electron Devices Soc.

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On the road of CMOS device continuously scaling, there are lots of challenges regarding the device structure and material engineering. GaN channel has recently been used in MOSFETs and achieved excellent performance. In this paper, we study a novel embedded gate GaN nanotube field effect transistor of 5 nm gate length with ION /IOF F as high as 10 6 , and subthreshold swing (SS) as small as 64 mV/dec using Sentaurus TCAD simulation. The device can effectively improve subthreshold characteristics due to the GaN channel and embedded gate design. Compared with Si nanotube FET and GaN nanowire FET, GaN embedded nanotube FET exhibits low SS and high ION /IOF F at the same channel thickness. GaN embedded nanotube FET has also been determined to superior temperature adaptability and performs better in terms of threshold voltage and subthreshold characteristics compared to Si nanotube FET at the same temperature. In addition, we investigated the impact of different lengths and thicknesses of the embedded gate on the subthreshold characteristics. As the length and thickness of the embedded gate are increased, SS and ION /IOF F are improved. This excellent electrical performance demonstrates the possibility of GaN as a channel material in MOSFETs and embedded gate as an effective design to improve subthreshold characteristics, opening a new way for continued device scaling.

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Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures

Cited by 11 publications

References 9 publications

RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si

GaN Nanotube FET With Embedded Gate for High Performance, Low Power Applications

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