RF Overdrive Burnout Behavior and Mechanism Analysis of GaN HEMTs Based on High Speed Camera

Liu, Chang; Liu, Hong Xia; Chen, Yiqiang; Shi, Yijun; Xie, Yu Han; Chen, S.; Peng, Lai; He, Zhiyuan; Huang, Yun

doi:10.1109/jeds.2023.3239100

Cited by 4 publications

(1 citation statement)

References 43 publications

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“…The performance of all the DUTs was therefore investigated by increasing the drain bias and analyzing the impact on linearity and harmonic performance. The devices were deliberately driven to a higher drain bias outside the industry specifications, similar to reported experimental studies [57], in an attempt to study the output power compression and harmonic distortion. The evolution of the saturated output power density and PAE for the different DUTs is compiled in figure 17(a).…”

Section: Rf Power Capabilities Using Load Pull Simulationsmentioning

confidence: 99%

Efficacy of back barrier engineered Π-gate InAlN/GaN high electron mobility transistors for high-power applications

Sehra

Anand

Saraswat

et al. 2023

J. Phys. D: Appl. Phys.

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This work investigates the thin barrier InAlN/GaN HEMTs for high power applications through TCAD simulations. To begin with, the TCAD simulations were first calibrated with the in – house fabricated InAlN HEMT sample for both DC and Pulsed characteristics. The thin barrier InAlN/GaN HEMTs shows a large leakage current through the gate electrode due to a high gate injection which severely degrades the breakdown characteristics of the device and thus acts as a bottleneck for high power applications. To improve the 2DEG confinement and to consequently reduce the bulk leakage, back – barrier technique is used. The resistive GaN buffer is replaced with AlGaN back – barrier which improves the breakdown characteristics at the cost of output power density. Thus, to scale up the output power density, and further optimize the breakdown characteristics, a Π – shaped Gate is introduced to limit the gate leakage current through the InAlN barrier by virtue of its improved hot electron reliability. Coupled with the AlGaN back – barrier, the Π – Gate significantly improves the breakdown characteristics for achieving high output power densities, albeit with minor trade – offs to the device gain. To elucidate the compatibility towards high power applications, all the device architectures are dynamically characterized by Pulsed IV simulations and the trap related dispersive effects are investigated. Amongst all, the Π – shaped Gate coupled with the AlGaN back – barrier outperforms the conventional architectures by exercising superior electrostatic control over the channel and exhibiting a high linearity for high power mm – Wave applications.

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Section: Rf Power Capabilities Using Load Pull Simulationsmentioning

confidence: 99%