Performance Assessment and Optimization of Vertical Nanowire TFET for Biosensor Application

Abstract

This paper reports the performance assessment of vertical silicon nanowire TFET (V-siNWTFET) design for biosensor applications using dielectric-modulation and gate underlap technique. The sensitivity of the V-siNWTFET is recognizing by immobilizing the different biological molecules such as lipids, biotin, uricase, protein, Gox, streptavidin, uriease, zein etc. in the cavity region which is created under the gate electrode and source oxide. The performance analysis is observed by varying the relative permittivity of the different biomolecules and analyzes the parametric variation both for neutral and charged biomolecules. The sensitivity of the biosensor has been detecting in the terms of drain current (I D ), threshold voltage (V TH ), subthreshold slope (SS), transconductance (g m ), and I ON /I OFF ratio. The proposed device structure has capable to reduce the leakage currents and high sensitivity biosensor design in the nanoscale regimes. The obtained best optimum parameters of the proposed devices are I ON (1.37E−08 A/µm), I OFF (9.44E−19 A/µm), SS (29.97 mV/dec) and I ON /I OFF (4.29E + 10) ratio with gate work-function (ϕ gate = 4.8 eV) and uniformly doped (1 × 10 –19 cm −3 ) silicon nanowire at drain to source voltage (V DS = 1.0 V). The higher sensitivity of the proposed V-siNWTFET for Biosensor is observed for Zein biomolecules (K = 5).

Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor

“…The presence of biomolecules alters the dielectric constant and capacitance of the gate, thereby inducing a significant change in the threshold voltage and drain current. To enhance the sensitivity of the biosensor, various dielectric modulated biosensors such as Impact Ionization MOSFET [5,6], Tunnel FET [7][8][9][10], multi gate FET [11][12][13][14], Junctionless FET [15][16][17][18][19], and high electron mobility transistors [20,21] have been introduced, each with distinct current transport mechanisms. In diverse configurations, a range of parameters are taken into account to evaluate the responsiveness of the biosensor.…”

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

“…The decrease in SCEs can be done by using multiple gates, GAA, 32 FinFET and the issue of doping can be resolved by junction less FET (JLFET). 33,34 JLFET device is fabricated in the paper 35 and exhibits superior electrical properties when contrasted with the conventional MOSFET. Additionally, the JLFET demonstrates favorable subthreshold slope (SS) characteristics in comparison to TFET.…”