Performance boost of crystalline in-Ga-Zn-O material and transistor with extremely low leakage for IoT normally-off CPU application

P‐6: Student Poster: 2731ppi OLED Display with Low Power Consumption and Wide Viewing Angle Using OS/Si VLSI Process Technology

“…Specifically, CAAC-IGZO FETs can be monolithically formed directly on transistors using a single crystal Si channel in a single crystal Si substrate. Considering this fact, we fabricated memories and central processing units with an OSLSI/SiLSI structure in which Si transistors and OSFETs are monolithically stacked [11][12][13][14].…”

Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film Transistors and High-Gain Zero-VGS-Load Inverter

“…1−3 N-Channel oxide thin-film transistors (TFTs) using amorphous oxide semiconductors represented by amorphous-In−Ga−Zn−O (a-IGZO) 4,5 have been implemented as a TFT backplane in state-of-art active matrix flat panel displays (AMFPDs) such as large-sized and highresolution active matrix organic light-emitting diodes (AMO-LEDs), energy-efficient active matrix liquid crystal displays (AMLCDs) for mobile devices, and high-resolution and highframe-rate AMLCDs for middle-and large-sized TV displays. 6−8 In addition to switching devices in display applications, oxide semiconductor device technology is rapidly extending to application fields such as back-end-of-line (BEOL) transistors, 9,10 sensors, 11 memory, 12 energy harvesting, 13,14 neuromorphic computing, 15 biomedical devices, 16 and so on.…”

“…Oxide semiconductors are widely accepted as promising materials to develop next-generation cost-effective, energy-efficient, and flexible electronics because devices can be fabricated on any type of large-sized substrates by a wide variety of device fabrication processes such as rf/dc sputtering and solution processing using inexpensive inorganic salt precursors. − N-Channel oxide thin-film transistors (TFTs) using amorphous oxide semiconductors represented by amorphous-In–Ga–Zn–O (a-IGZO) , have been implemented as a TFT backplane in state-of-art active matrix flat panel displays (AMFPDs) such as large-sized and high-resolution active matrix organic light-emitting diodes (AMOLEDs), energy-efficient active matrix liquid crystal displays (AMLCDs) for mobile devices, and high-resolution and high-frame-rate AMLCDs for middle- and large-sized TV displays. − In addition to switching devices in display applications, oxide semiconductor device technology is rapidly extending to application fields such as back-end-of-line (BEOL) transistors, , sensors, memory, energy harvesting, , neuromorphic computing, biomedical devices, and so on.…”

Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure

“…Electronics 2021, 10, 1561 2 of 11 IGZO is a material described by the Sharp and Hosono groups in 2004 [9][10][11] that has since been studied extensively as a TFT channel material for displays because of its relatively wide bandgap (~3.1 eV) and moderately high carrier mobility (10-65 cm 2 /V•s). Recently, it has been shown that the crystal structure can be easily formed in a chosen direction in the form of C-AXIS aligned crystal (CAAC)-IGZO [12][13][14]. The use of this type of IGZO as a channel material should be able to overcome the problems of leakage current interruption and temperature-dependent operating current.…”