2013
DOI: 10.1016/j.solmat.2012.10.026
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Performance enhancement in inverted polymer photovoltaics with solution-processed MoO and air-plasma treatment for anode modification

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Cited by 29 publications
(15 citation statements)
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“…The device structure follows our previous report (ITO/TiO 2 /CdTe/PPV/MoO 3 /Au). TiO 2 and MoO 3 deposited from isopropyl alcohol solution are selected as the electron transport layer and hole transport layer. Water‐soluble PPV precursor and CdTe NCs serve as the donor and acceptor.…”
Section: Methodsmentioning
confidence: 99%
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“…The device structure follows our previous report (ITO/TiO 2 /CdTe/PPV/MoO 3 /Au). TiO 2 and MoO 3 deposited from isopropyl alcohol solution are selected as the electron transport layer and hole transport layer. Water‐soluble PPV precursor and CdTe NCs serve as the donor and acceptor.…”
Section: Methodsmentioning
confidence: 99%
“…As shown in Figure b, in comparison with Device B, Device A exhibits slightly improved V oc and FF, decreased J sc , overall comparable PCE. As spin‐coated MoO 3 layer may cover the active layer incompletely, the following evaporated gold atoms can easily penetrate through the voids of the MoO 3 layer, thus leading to a direct contact between the gold electrode and the active layer, which will decrease the shunt resistance and lower the V oc and FF. In Device A it is difficult for the gold NPs in the dip‐coated film to penetrate through the voids of the MoO 3 layer due to the large size of the gold NPs and a weak applied force during fabrication.…”
Section: Methodsmentioning
confidence: 99%
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“…Potential alternatives for aforementioned purpose are transition metal oxides, such as V 2 O 5 [23][24][25], WO 3 [26][27][28], NiO [12,29], and MoO 3 [30][31][32][33][34][35][36][37], which have necessary semiconductor property and well physiochemical stability. Among this transition metal oxides, MoO 3 is one of the promising candidates due to its nontoxicity, deep electronic state and relative lower vaporization temperature (o800°C) which can easily deposited in vacuum [37].…”
Section: Introductionmentioning
confidence: 99%
“…The solgel MoO x film is very uniform but a higher thermal treated temperature ( $250°C) is needed for ensuring good carrier transporting property, which cannot be incompatible with the flexible substrates in R2R process and other high throughout process. Except above methods, the solution-processed MoO x film from raw materials Mo(CO) 3 (EtCN) 3 [32,34], MoO 2 (acac) 2 [30] were also investigated and could give a photovoltaic efficiency which can comparable to that utilizing PEDOT:PSS in OSCs. Unfortunately, the oxygen sensitive and thermal temperature sensitive were found, which remain as open issues to be addressed in the future.…”
Section: Introductionmentioning
confidence: 99%