Performance Enhancement in N-Channel Organic Field-Effect Transistors Using Ferroelectric Material as a Gate Dielectric

Ramos, Benjamin; Lopes, Manuel; Buso, David; Ternisien, Marc

doi:10.1109/tnano.2017.2683201

Cited by 10 publications

(6 citation statements)

References 27 publications

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“…When OFETbased memories are fabricated using the traditional planar architecture, their performance (particularly, driving force and operating speed) is generally limited by a few factors, including their relatively long channel lengths, the low intrinsic mobility of OSC materials, and the charged defects arising at the I/S interface. [341][342][343]361] In some cases, the mechanical stability of POFETs also becomes questionable since their bending/flexing has been reported to induce small cracks in the OSC layer, which inhibits the transport of lateral charge transport. [88,205] Given these circumstances, fabrication of OFETs in the vertical architecture (viz.…”

Section: Discussion and Comparison Between Pofet-and Vofet-based Flex...mentioning

confidence: 99%

“…The characteristics above play an active role in reducing the operating speed and deteriorating the driving force of planar ferroelectric OFET NVMs. [342,343] In the case of planar devices prepared on flexible substrates, mechanical bending can produce small cracks in the OSC layer, hindering the lateral transport of charge carriers. [88,205] Considering these limitations, researchers have started considering the fabrication of ferroelectric OFET memories in vertical architecture.…”

Section: Application In Ferroelectric Memoriesmentioning

confidence: 99%

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Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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According to the forecast of Allied Market Research, the flexible electronics market is projected to reach $42.48 billion by 2027. It is estimated to revolutionize the lighting technology, power integration displays, and health monitoring systems. The popularity of flexible electronics is mainly due to the unique benefits of organic materials and devices that offer cost-effectiveness, low-temperature processability, mechanical softness, and shape adaptability, [5][6][7] which are difficult to obtain with traditional, complementary-metal-oxide-semiconductor (CMOS)-based rigid systems. [8] Over the past two decades, research interest in flexible electronic systems has grown exponentially, driven by the requirements of interface softness and shape adaptability for electronics used in Internet-of-Things (IoT), [9] human-machine interfaces, [10] and advanced healthcare. [11] Although significant progress has been made in academia, the practical application of flexible electronics in the industry is limited. Presently, thin-film photovoltaics and flexible displays mainly contribute to the flexible electronics market, with a noticeable presence held by radio frequency identification (RFID) tags and medical X-ray imagers. [12] Indeed, much of the success of present flexible electronic systems rely on the performance and reliability of thin-film The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET-and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

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Section: Discussion and Comparison Between Pofet-and Vofet-based Flex...mentioning

confidence: 99%

Section: Application In Ferroelectric Memoriesmentioning

confidence: 99%

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

et al. 2023

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“…The second one is the solution-process method. Printed TFTs with high on/off ratios and low operation voltages could be obtained when using high- k polymer dielectrics such as poly(vinylidenefluoride trifluoroethylene) P(VDF-TrFE) or high-capacitance electrolytes as the dielectric inks. , Unfortunately, these devices exhibited large hysteresis for P(VDF-TrFE) TFT devices and poor bias stress stability for high-capacitance electrolyte TFT devices. Using thermal oxidation or oxygen plasma treatment to form ultrathin metal oxide dielectric layers above active metals [aluminum (Al) and yttrium (Y)] is the third way, which is a large-area, simple, and low-cost method to prepare the dielectric layers (especially for the preparation of AlO x ). , Some groups have ever tried to use ultrathin aluminum oxide dielectric layers produced by oxygen plasma or room-temperature oxidation to fabricate the solution-processable or printed TFTs. ,− Unfortunately, these TFT devices showed high leakage currents up to 10 –8 A.…”

Section: Introductionmentioning

confidence: 99%

Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO₂ Sensors

Wang

Wei

et al. 2020

ACS Appl. Mater. Interfaces

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Development of large-area, low-cost, low-voltage, low-power consumption, flexible high-performance printed carbon nanotube thin-film transistors (TFTs) is helpful to promote their future applications in sensors and biosensors, wearable electronics, and the Internet of things. In this work, low-voltage, flexible printed carbon nanotube TFTs with a large-area and low-cost fabrication process were successfully constructed using ultrathin (∼3.6 nm) AlO x thin films formed by plasma oxidation of aluminum as dielectrics and screen-printed silver electrodes as contact electrodes. The as-prepared bottom-gate/bottom-contact carbon nanotube TFTs exhibit a low leakage current (∼10–10 A), a high charge carrier mobility (up to 9.9 cm2 V–1 s–1), high on/off ratios (higher than 105), and small subthreshold swings (80–120 mV/dec) at low operation voltages (from −1.5 to 1 V). At the same time, printed carbon nanotube TFTs showed a high response (ΔR/R = 99.6%) to NO2 gas even at 16 ppm with a faster response and recovery speed (∼8 s, exposure to 0.5 ppm NO2), a lower detection limit (0.069 ppm NO2), and a low power consumption (0.86 μW, exposure to 16 ppm NO2) at a gate voltage of 0.2 V at room temperature. Moreover, the printed carbon nanotube devices exhibited excellent mechanical flexibility and bias stress stability after 12,000 bending cycles at a radius of 5 mm and a bias stress test for 7200 s at a gate voltage of ±1 V, which originated from the ultrathin and compact AlO x dielectric and the super adhesion force between screen-printed silver electrodes and polyethylene terephthalate substrates.

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“…However, transistor devices employing these high‐ k dielectrics suffer from large bias hysteresis and large energetic disorder due to their ferroelectric nature and highly polarized interface. [ 4–9 ] Alternate dielectric engineering approaches such as polymer blend [ 10,11 ] and bilayer polymer [ 12,13 ] dielectrics have been employed in combination with low‐ k polymer dielectrics to curb these drawbacks. However, fabricated devices based on these techniques showed relatively lower charge‐carrier mobility compared to single‐layer high‐ k polymer gate dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Solid‐State Electrolyte Dielectrics Based on Exceptional High‐k P(VDF‐TrFE‐CTFE) Terpolymer for High‐Performance Field‐Effect Transistors

Nketia‐Yawson

Tabi

et al. 2020

Adv Materials Inter

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High‐performance and low‐voltage organic and inorganic field‐effect transistors (FETs) with solid‐state electrolyte gate insulator that is composed of an exceptional high‐k fluorinated dielectric and an ion‐gel‐blend polymer matrix are reported. The structuring polymer is high‐k poly(vinylidenefluoride‐trifluoroethylene‐chlorotrifluoroethylene) (P(VDF‐TrFE‐CTFE)) terpolymer. The ion gel is made of poly(vinylidene fluoride‐co‐hexafluroropropylene) (P(VDF‐HFP)) and 1‐ethyl‐3‐methylimidazolium bis(trifluoromethylsulfonyl) imide ([EMIM][TFSI]) ion liquid. The blend polymer matrix has high measured capacitance of ≈2 to 5.5 µF cm−2 at 100 Hz, which is attributed to formation of electrical double layers (EDLs) at the insulator/semiconductor interface. High effective carrier mobility (μeff) and low operating voltage ≤2 V with just 0.5 v% of P(VDF‐HFP)‐[EMIM][TFSI] solution in the bulk P(VDF‐TrFE‐CTFE) insulating layer are demonstrated, coupled with low gate‐leakage current levels. Excellent μeff = 1.30 ± 0.19 cm2 V−1 s−1 is achieved in P3HT FETs with SEGI, which is a remarkable boost from 0.48 ± 0.09 cm2 V−1 s−1 at 30 V when pure P(VDF‐TrFE‐CTFE) dielectric is used. Other semiconductors are also tested: IGZO has μeff = 11.09 ± 2.07 cm2 V−1 s−1, and PDFDT has μeff = 2.42 ± 0.46 cm2 V−1 s−1. These remarkable increases in mobility are attributed to the high concentration of induced carriers in the semiconducting channel.

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Performance Enhancement in N-Channel Organic Field-Effect Transistors Using Ferroelectric Material as a Gate Dielectric

Cited by 10 publications

References 27 publications

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO₂ Sensors

Solid‐State Electrolyte Dielectrics Based on Exceptional High‐k P(VDF‐TrFE‐CTFE) Terpolymer for High‐Performance Field‐Effect Transistors

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Performance Enhancement in N-Channel Organic Field-Effect Transistors Using Ferroelectric Material as a Gate Dielectric

Cited by 10 publications

References 27 publications

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Impact of Planar and Vertical Organic Field‐Effect Transistors on Flexible Electronics

Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO2 Sensors

Solid‐State Electrolyte Dielectrics Based on Exceptional High‐k P(VDF‐TrFE‐CTFE) Terpolymer for High‐Performance Field‐Effect Transistors

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Product

Resources

About

Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO₂ Sensors