Performance enhancement of a FET device with ferroelectric tunnel junction and its application as a biosensor

Ghosh, Puja; Bhowmick, Brinda

doi:10.1007/s10825-022-01935-4

Cited by 3 publications

(1 citation statement)

References 40 publications

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“…Recently, researchers are looking towards non-volatile information devices with low power consumption, such as tunnel FETs [1][2][3][4] and negative capacitance FETs [5,6] for logic application and ferroelectric FETs (FeFETs) for memory application. FeFETs have been attracting much attention in non-volatile memory (NVM) application due to the advantages of the scalability and CMOS compatibility for hafniabased ferroelectric material [7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

Hsu

et al. 2023

Semicond. Sci. Technol.

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We report the temperature effects on the performance of ferroelectric field-effect transistor(FeFET) based non-volatile memory (NVM) considering random grain phase variation in the ferroelectric layer through simulation. Based on the FE temperature effect model that accounts for both the transistor and ferroelectric degradation, we demonstrate that: 1) at a certain temperature, the memory window (MW) decreases with pronounced effect on low threshold voltage shift and its variation increases as the FE phase decreases; 2) with the temperature increases, the MW decreases with pronounced effect on high threshold voltage shift. The random grain phase variation further exacerbates the MW distribution, thus degrading the sensing margin. These results may provide insights for device design of high-performance FeFET-based NVMs.

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Section: Introductionmentioning

confidence: 99%

Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

Hsu

et al. 2023

Semicond. Sci. Technol.

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Negative capacitance split source tunnel FET as dielectric modulated highly sensitive biosensor

Pathakamuri,

Pandey,

Ghosh

2024

Microsyst Technol

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New Label-Free DNA Nanosensor Based on Top-Gated Metal–Ferroelectric–Metal Graphene Nanoribbon on Insulator Field-Effect Transistor: A Quantum Simulation Study

Tamersit,

Kouzou,

Rodriguez

et al. 2024

Nanomaterials

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In this paper, a new label-free DNA nanosensor based on a top-gated (TG) metal–ferroelectric–metal (MFM) graphene nanoribbon field-effect transistor (TG-MFM GNRFET) is proposed through a simulation approach. The DNA sensing principle is founded on the dielectric modulation concept. The computational method employed to evaluate the proposed nanobiosensor relies on the coupled solutions of a rigorous quantum simulation with the Landau–Khalatnikov equation, considering ballistic transport conditions. The investigation analyzes the effects of DNA molecules on nanodevice behavior, encompassing potential distribution, ferroelectric-induced gate voltage amplification, transfer characteristics, subthreshold swing, and current ratio. It has been observed that the feature of ferroelectric-induced gate voltage amplification using the integrated MFM structure can significantly enhance the biosensor’s sensitivity to DNA molecules, whether in terms of threshold voltage shift or drain current variation. Additionally, we propose the current ratio as a sensing metric due to its ability to consider all DNA-induced modulations of electrical parameters, specifically the increase in on-state current and the decrease in off-state current and subthreshold swing. The obtained results indicate that the proposed negative-capacitance GNRFET-based DNA nanosensor could be considered an intriguing option for advanced point-of-care testing.

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Performance enhancement of a FET device with ferroelectric tunnel junction and its application as a biosensor

Cited by 3 publications

References 40 publications

Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

Negative capacitance split source tunnel FET as dielectric modulated highly sensitive biosensor

New Label-Free DNA Nanosensor Based on Top-Gated Metal–Ferroelectric–Metal Graphene Nanoribbon on Insulator Field-Effect Transistor: A Quantum Simulation Study

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