Performance Enhancement of CNTFETs with High-Κ Dielectric

Abstract

The potential impact of high permittivity gate dielectrics on the performance of a ballistic nanoscale CNTFET is studied over a wide range of dielectric permittivities with low temperatures ranging from room temperature down to 100 K. Using the non-equilibrium Greens function (NEGF) formalism. Device characteristics such as ION/IOFF current ratio, threshold voltage, the drain induced barrier lowering (DIBL). The effects of temperature varying are also examined.

A Compact Model of Gate Capacitance in Ballistic Gate-All-Around Carbon Nanotube Field Effect Transistors

“…QCNT is a function of Fermi-Dirac distribution and density of state (DOS). Hence, the total QCNT can be written as [21];…”