Performance Enhancement of Crystal Silicon Solar Cell by a CsPbBr₃–Cs₄PbBr₆ Perovskite Quantum Dot @ZnO/Ethylene Vinyl Acetate Copolymer Downshifting Composite Film

Abstract

Crystal silicon solar cell (CSSC) is a welldeserved champion in the sustainable energy market. The advantages of high efficiency, durable and stable working ability, gigantic productivity, and continuous cost reduction by new fabrication technologies make it more attractive. [1] However, researchers have never stopped to pursue modern procedures to enhance the photovoltaic performance of CSSCs. Recently, passivated emitter and rear contacts (PERCs), [2] heterojunctions with an intrinsic thin layer (HIT), [3] and tunnel oxide passivating contacts (TOPCon) [4] have become mature technical solutions from laboratory to commercial products. In fact, it is the incident photon management, material quality, and device structure that directly determine the CSSC efficiency. Thus, high photon utilization and low defect concentration and carrier recombination are the milestones to achieve for an efficient device. [5][6][7] Photon management in CSSCs was traditionally implemented by surface roughening of silicon wafer, antireflection film deposition, and device stacking. [8][9][10][11][12] The indirect and narrow bandgap (1.12 eV) of silicon make a low response for high-energy (UV-blue) photons due to their high reflection coefficient and

Large-scale preparation of CsPbBr3 perovskite quantum dot/EVA composite adhesive film by melting for crystal silicon solar cell

“…The voltagerelated power loss is similar. Meanwhile, the carrier recombination power loss in the revised spectrum (1.85%) is larger than that in the standard spectrum (1.48%), which is due to the fact that with the use of downshifting films, more carriers will be activated and more radiative recombination will occur [29].…”

“…Gao et al [24] spin-coated a colloidal CsPbBr 3 QDs solution on the surface of polycrystalline silicon solar cells to form a CsPbBr 3 QDs/polycrystalline silicon hybrid structure, and the solar cells spincoated with two layers of CsPbBr 3 QDs had a PCE of up to 14.52%. However, solvent volatilization would increase the probability of QDs agglomeration, affecting the stability of composite materials and facing challenges in the direction of industrialization.Our group proposed an in situ deposition of ZnO@CsPbBr 3 -Cs 4 PbBr 6 PQDs/ethylene vinyl acetate copolymer (EVA) composite films at room temperature, which improved absolutely the device efficiency by 1.18% [29]. Wang et al [30] proposed a new solvent-free polymer melt encapsulation method for preparation of PQDs/polymer.…”

Multi-Functional Ethylene-vinyl Acetate Copolymer Flexible Composite Film Embedded with Indium Acetate-Passivated Perovskite Quantum Dots

“…Song et al developed a ZnO@CsPbBr 3 -Cs 4 PbBr 6 /EVA composite film, which used a ZnO coating on the surface of QDs and the characteristics of EVA as a battery-packaging material to improve the stability of QDs. After 30 days of indoor placement, the battery efficiency was basically the same as at the beginning [13]. Pan et al employed a bidentate ligand to passivate CsPbI 3 quantum dots post-synthesis.…”

“…Cesium lead halide perovskite quantum dots (QDs) exhibit excellent light absorption performance [1], a high photoluminescence quantum yield (PLQY) [2,3], a narrow emission half-peak width [4], a long carrier diffusion length [5], and an adjustable spectral range [6,7]. These desirable properties make them highly promising for applications in light-emitting diodes (LEDs) [8][9][10][11], solar cells [12][13][14], gas-sensing detection [15][16][17], photodetectors [18], and other fields [19][20][21]. However, the practical application of cesium lead halide perovskite quantum dots is hindered by their poor stability in light, water, oxygen, and heat [22][23][24][25].…”

Machine-learning-aided identification of ethanol in humid air using zinc complex capped CsPbBr3 resistive sensors

“…Perovskite QDs (abbreviated as PQDs), with a lateral dimension of o20 nm, are viewed as promising candidates for addition in polymerbased composites for photovoltaics (PV), light-emitting diodes (LEDs), sensors and down-converting optical/optoelectronic materials. [13][14][15] Guan et al synthesized stable single SiO 2coated CsPbBr 3 (CsPbBr 3 @SiO 2 ) QDs at RT and demonstrated a photoluminescence quantum yield (PLQY) of 75%. Subsequently, WLEDs were constructed by combining CsPbBr 3 @SiO 2 with red Ag-In-Zn-S QDs on InGaN blue chips, achieving a high color rendering index (CRI) of 91, a correlated color temperature (CCT) of 3689 K and a power efficiency of 40.6 Lm W -1 .…”