Crystal silicon solar cell (CSSC) is a welldeserved champion in the sustainable energy market. The advantages of high efficiency, durable and stable working ability, gigantic productivity, and continuous cost reduction by new fabrication technologies make it more attractive. [1] However, researchers have never stopped to pursue modern procedures to enhance the photovoltaic performance of CSSCs. Recently, passivated emitter and rear contacts (PERCs), [2] heterojunctions with an intrinsic thin layer (HIT), [3] and tunnel oxide passivating contacts (TOPCon) [4] have become mature technical solutions from laboratory to commercial products. In fact, it is the incident photon management, material quality, and device structure that directly determine the CSSC efficiency. Thus, high photon utilization and low defect concentration and carrier recombination are the milestones to achieve for an efficient device. [5][6][7] Photon management in CSSCs was traditionally implemented by surface roughening of silicon wafer, antireflection film deposition, and device stacking. [8][9][10][11][12] The indirect and narrow bandgap (1.12 eV) of silicon make a low response for high-energy (UV-blue) photons due to their high reflection coefficient and

No abstract