Performance Enhancement of Dopingless Tunnel-FET Based on Ge-Source with High-k

Cecil, Kanchan; Singh, Jawar

doi:10.1109/inis.2015.68

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…JLTFETs also include inferior I on and ambipolar behavior. To overcome these problems, different methods have been investigated, such as: using heterostructures at source/channel interfaces [37][38][39][40][41], the assumption of gate workfunction engineering [42][43][44][45], the adoption of hetero-gate dielectrics [46][47][48][49], using Gaussian-doping profiles [22,50,51], applying source pockets [52], the consideration of strain engineering [53,54], using ferroelectric insulators [40], and drain workfunction engineering for DLTFET [55,56].…”

Section: Introductionmentioning

confidence: 99%

Representation of heterostructure electrically doped nanoscale tunnel FET with Gaussian-doping profile for high-performance low-power applications

2018

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In this paper, a gallium antimonide junctionless tunnel field-effect transistor based on electrically doped concept (GaSb-EDTFET) is studied and simulated. The performance of the device is analyzed based on the energy band diagram and electric field profile. The on-current, transconductance, and cutoff frequency are enhanced in case of GaSb-EDTFET compared with Si-EDTFET due to the combination of the high tunneling efficiency of the narrow bandgap and the high-electron mobility of GaSb. On the other hand, the Gaussian-doping profile decreases the ambipolar and off current by increasing the tunneling barrier length at the drain/channel interface. Hence, applying Gaussian-doping profile on GaSb-EDTFET makes it a suitable candidate for analog and digital applications. Next, heterostructure channel/source interface EDTFET is studied which uses GaSb for the source and AlGaSb for the drain and channel regions. Then, it has been optimized by numerical simulation in terms of aluminum (Al) composition. The optimal Al composition was founded to be around 10% (x = 0.1). It is shown that the blend of Gaussian-doping profile and the heterostructure channel/source interface with optimal Al composition remarkably reduces ambipolar current amount to a value of 1.3 × 10 −23 A/μm. The improvements in terms of I off , I on , I on /I off rate, subthreshold swing, transconductance, cutoff frequency, and also suppressed ambipolar behavior are illustrated by numerical simulations.

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