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In this work we investigate the n-type single halo implantation in channel of lightly doped drain and source CNTFET (SH-LDDS-CNTFET) and propose the n-type double linear halo implantation in the channel of LDDS-CNTFET. These transistors are simulated with a non-equilibrium Green's function method. We demonstrate that in the proposed structure the f T at the V GS ranges of 0-0.25 V and more than 0.42 V is much higher compared to the LDDS-CNTFET and SH-LDDS-CNTFET and the SH-LDDS-CNTFET, respectively. Finally, simulations demonstrate that the f T of the proposed transistor is more than the LDDS-CNTFET at a wide range of V GS , whereas the f T of SH-LDDS-CNTFET is more than the LDDS-CNTFET for narrow ranges of V GS .

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