2019
DOI: 10.1007/s10854-018-00580-7
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Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate

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Cited by 4 publications
(2 citation statements)
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“…In improving the output power of the LED chip, it is essential that the thermal properties are enhanced to deliver optimum performance. The flip-chip LED structure was proposed to address issues associated with optical output power and thermal performance [16][17][18][19]. The light associated with the flip-chip LED is extracted from the transparent sapphire side, without an electrode barrier, and the total reflection is reduced due to the refractive index of sapphire, resulting in greater light efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…In improving the output power of the LED chip, it is essential that the thermal properties are enhanced to deliver optimum performance. The flip-chip LED structure was proposed to address issues associated with optical output power and thermal performance [16][17][18][19]. The light associated with the flip-chip LED is extracted from the transparent sapphire side, without an electrode barrier, and the total reflection is reduced due to the refractive index of sapphire, resulting in greater light efficiency.…”
Section: Introductionmentioning
confidence: 99%
“…This seriously limits the external quantum efficiency (EQE) of GaN-based NUV LEDs. Various methods such as buffer layer technology, [9][10][11] flip-chip structure, 12 patterned sapphire substrates (PSSs), [13][14][15] surface roughening, 16,17 photonic crystals [18][19][20] and nanorod structures 21 have been utilized to improve the performance of light-emitting diodes (LEDs). Among these technologies, flipchip structure and PSSs have been successfully applied in commercial GaN-based NUV LEDs.…”
Section: Introductionmentioning
confidence: 99%