Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; passivation

Xu, Dong-Hui; Chu, Kanin; Diaz, J.; Zhu, Wenhua; Roy, R.; Seekell, P.; Pleasant, L. Mt.; Isaak, R.; Yang, Xiaoping; Nichols, K. B.; Pritchard, David; Duh, G.; Chao, P.C.; Xu, Min; Ye, Peide

doi:10.1109/lec.2012.6411000

Cited by 1 publication

(1 citation statement)

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“…Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), and Low Pressure Chemical Vapor Deposition (LPCVD) are commonly used to prepare passivation layers of devices. At present, it has been explored that the insulation material widely used in the passivation layer of HEMT devices, including SiO 2 , Si 3 N 4 [19], and Al 2 O 3 [20]. In addition, GaN can be oxidized in the air forming a layer of gallium sub-oxide (GaO x ) on the surface.…”

Section: Surface Passivationmentioning

confidence: 99%

Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology

et al. 2023

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In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection. The air-bridge source-connection was formed using the Direct Laser Writing Grayscale Photolithography, and it directly connected the two adjacent sources and spanned the gate and drain of the multi-finger p-GaN gate device, which featured the advantages of stable self-support and large-span capabilities. Verified by the experiments, the fabricated air-bridge p-GaN gate devices utilizing the Direct Laser Writing Grayscale Photolithography presented an on-resistance of 36Ω∙mm, a threshold voltage of 1.8 V, a maximum drain current of 240 mA/mm, and a breakdown voltage of 715 V. The results provide beneficial design guidance for realizing large gate-width p-GaN gate high-electron-mobility transistor devices.

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Section: Surface Passivationmentioning

confidence: 99%