2018
DOI: 10.1021/acsami.8b03444
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Performance Enhancement of Inverted Perovskite Solar Cells Based on Smooth and Compact PC61BM:SnO2 Electron Transport Layers

Abstract: In this work, PCBM:SnO electron transport layers (ETLs) were applied in inverted CHNHPbI perovskite solar cells, and a high power conversion efficiency of 19.7% could be obtained. It increased by 49.0% in comparison with the device based on PCBM-only ETL (13.2%). SnO nanocrystals with excellent dispersibility were employed here to fill the pinholes and cover the valleys of PCBM layer, forming smooth and compact PCBM:SnO layers. Simultaneously, the electron traps caused by deep-level native defects of SnO were … Show more

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Cited by 50 publications
(45 citation statements)
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“…In the same way, the electron flow barriers caused by deep-level native defects of SnO 2 were reported to be reduced by PC 61 BM. [80] Therefore, PC 61 BM:SnO 2 electron transport layers can inhibit both of the defects in PC 61 BM and SnO 2 layers which contribute to the electron transport enhancement and decrease the recombination loss. For device completion, the cathode (Ag/P3HT/CH 3 NH 3 PbI 3 ) and anode (Carbon yarn/SnO 2 -PCBM) yarns were twisted, as shown in Figure 6a.…”
Section: Perovskite Solar Yarn Assembling and Characterizationmentioning
confidence: 99%
“…In the same way, the electron flow barriers caused by deep-level native defects of SnO 2 were reported to be reduced by PC 61 BM. [80] Therefore, PC 61 BM:SnO 2 electron transport layers can inhibit both of the defects in PC 61 BM and SnO 2 layers which contribute to the electron transport enhancement and decrease the recombination loss. For device completion, the cathode (Ag/P3HT/CH 3 NH 3 PbI 3 ) and anode (Carbon yarn/SnO 2 -PCBM) yarns were twisted, as shown in Figure 6a.…”
Section: Perovskite Solar Yarn Assembling and Characterizationmentioning
confidence: 99%
“…Chen 等 [94] 使用 CoSe 掺杂 PCBM 作为电子传输层, 将 CoSe 引入 PCBM 层改善了 电子传输层的导电性并降低了光致发光强度, 从而增强 了界面电子提取并降低了钙钛矿/ETM 界面处的电子转 移电阻, 基于 NiO/CH 3 NH 3 PbI 3 /PCBM:CoSe/Ag 的器件 获 得 了 12.5% 的 光 电 转 化 效 率 . Wang 等 [20] 将 PC 61 [15] 采用 n 型聚 合物材料 F8TBT 对 PCBM 进行掺杂, 掺杂后在钙钛矿 层 上 形 成 连 续 且 覆 盖 度 良 好 的 薄 膜 , 基 于 PEDOT:PSS/MAPbI 3 /PCBM:F8TBT/Ag 结构的器件光电 转化效率达到 20.6%.…”
Section: 钙钛矿活性层unclassified
“…Furthermore, owing to the advantage of negligible hysteresis, PSCs with inverted configuration have attracted extensive consideration, thereby attaining high PCEs of over 20% (the photovoltaic parameters of state‐of‐the‐art planar inverted PSCs are summarized in Table S1, Supporting Information). [ 15–25 ]…”
Section: Introductionmentioning
confidence: 99%