Performance enhancement of junctionless silicon nanotube FETs using gate and dielectric engineering

Scarlet, S. Priscilla; Vinodhkumar, N.; Srinivasan, R.

doi:10.1007/s10825-020-01611-5

Cited by 5 publications

(5 citation statements)

References 25 publications

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“…As shown in figure 4 and thus suppresses L-BTBT [13,16,24]. The electric field at the source cyclic low doping concentration region-channel decreases with increasing R CD , leading to an increase in the barrier height in the source cyclic low doping concentration region [25].…”

Section: Simulation Results and Discussionmentioning

confidence: 92%

“…First, the introduction of cyclic low doping concentration regions reduces the peak electric field at the channel-drain cyclic low doping concentration region as shown in figure 3(b) [23]. As shown in figure 4(a), the reduction of the peak electric field leads to a decrease in the energy band bending in the drain cyclic low doping concentration region [24], which increases the tunneling width and thus achieves the effect of inhibiting L-BTBT [13,16,24]. In addition, the tunneling width of the C NT JLFET increases with increasing L CD , which further suppresses the L-BTBT and shifts the trigger point of the L-BTBT to the left [17].…”

Section: Simulation Results and Discussionmentioning

confidence: 96%

“…Recently, the use of gate engineering and gate dielectric engineering has been proposed to tune the energy band of the NT JLFET in the off state to increase the tunnel width, suppress the L-BTBT, and reduce the I OFF [10][11][12][13][14]. When the channel length of the NT JLFET is 10 nm, the I OFF of the NT JLFET is reduced by only one order of magnitude [10].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Wang,

Xiao,

Wang

et al. 2024

Semicond. Sci. Technol.

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To reduce the static power consumption of the NT JLFET and the effect of SCEs on the NT JLFET, A nanotube junctionless field effect transistor with cyclic low doping concentration regions (C NT JLFET) is proposed. Based on Sentaurus TCAD numerical simulations, the electrical properties of the C NT JLFET and the NT JLFET were comparatively investigated, and the effects of the length (LCD) and radius (RCD) of cyclic low doping concentration regions on the electrical properties of the C NT JLFETs were studied. The C NT JLFET reduces the gate-induced drain leakage (GIDL) due to lateral band-to-band-tunneling (L-BTBT) as compared to the NT JLFET. As the LCD or RCD increases, the off-state current decreases. In addition, the C NT JLFET suffers from fewer short channel effects (SCEs), such as threshold voltage roll-off, drain-induced barrier lowering and subthreshold swing deterioration, compared to the NT JLFET. The inhibition of L-BTBT and attenuation of SCEs by cyclic low doping concentration regions remains when the channel length of the C NT JLFET is shortened to 10 nm. The C NT JLFET are suitable for low power applications as they exhibit reduced L-BTBT and suffer from fewer SCEs.

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Section: Simulation Results and Discussionmentioning

confidence: 92%

Section: Simulation Results and Discussionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Wang,

Xiao,

Wang

et al. 2024

Semicond. Sci. Technol.

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“…[35], a lowcost fabrication technology of vertically aligned Si NTs via a wet-etching process with controllable NT thickness was demonstrated. Besides thermoelectrics, the applications of Si-based NTs include biosensors, energy storage, photodetectors, optoelectronics and field-effect transistors [35][36][37][38][39].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, combination of crystalline silicon and amorphous silica layers allows one to study unusual phonon phenomena related to phonon propagation through heterogeneous crystalline/amorphous media [8,28,43,51]. Although Si-based NTs have been intensively studied during recent years [32][33][34][35][36][37][38][39], their thermal properties remain poorly understood.…”

Section: Introductionmentioning

confidence: 99%

Phonons and Thermal Transport in Si/SiO2 Multishell Nanotubes: Atomistic Study

et al. 2021

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Thermal transport in the Si/SiO2 multishell nanotubes is investigated theoretically. The phonon energy spectra are obtained using the atomistic lattice dynamics approach. Thermal conductivity is calculated using the Boltzmann transport equation within the relaxation time approximation. Redistribution of the vibrational spectra in multishell nanotubes leads to a decrease of the phonon group velocity and the thermal conductivity as compared to homogeneous Si nanowires. Phonon scattering on the Si/SiO2 interfaces is another key factor of strong reduction of the thermal conductivity in these structures (down to 0.2 Wm−1K−1 at room temperature). We demonstrate that phonon thermal transport in Si/SiO2 nanotubes can be efficiently suppressed by a proper choice of nanotube geometrical parameters: lateral cross section, thickness and number of shells. We argue that such nanotubes have prospective applications in modern electronics, in cases when low heat conduction is required.

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Sensitivity analysis of junctionless silicon NT-TFET and performance metrics comparison with the silicon NT-TFET

Rajendiran,

Justeena,

Mrabet

et al. 2024

J Nanopart Res

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Performance enhancement of junctionless silicon nanotube FETs using gate and dielectric engineering

Cited by 5 publications

References 25 publications

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Phonons and Thermal Transport in Si/SiO2 Multishell Nanotubes: Atomistic Study

Sensitivity analysis of junctionless silicon NT-TFET and performance metrics comparison with the silicon NT-TFET

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