Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian Doping

Shylendra, Ahish; Sharma, Dheeraj; Kumar, Yogesh; Vasantha, M. H.

doi:10.1109/ted.2015.2503141

Cited by 141 publications

(53 citation statements)

References 27 publications

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“…It is the time taken by the charge carriers (electrons) to cross the channel. Analytical expression for calculating the transit time as expressed in [20] is-…”

Section: Transit Timementioning

confidence: 99%

Design & Optimization of Gate-All-Around Tunnel FET for Low Power Applications

Dutta

Soni

Pattanaik

2018

IJET

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This paper investigates the performance of tri material gate tunnel field effect transistor (TMGTFET) device designed in gate all around (GAA) configuration. The device performance is analyzed by varying various device related parameters like: drain doping, oxide thickness and radius of silicon core. Simulations are performed using technology computer-aided design (TCAD) tool at 60 nm gate length. Simulation results show that the performance of TMGTFET device can be optimized by proper selection of device parameters so as to achieve improvements in the ON current, OFF current, sub-threshold swing and ambipolar current. The silicon based TMGTFET device demonstrates good performance which makes it a suitable candidate for low power applications with ON current of 0.386 µA/µm, average subthreshold swing of 32.06 mV/decade, maximum current gain cut off frequency of 41.4 GHz and extremely low OFF current value of the order of 10-20A/µm. We have performed the device optimization to boost the ON current and improve the sub-threshold slope in order to make sure that this device configuration becomes suitable for both low power and high performance applications. The proposed hetero dielectric tri material gate tunnel FET device (HD-TFET) designed in gate all around configuration achieves 19.7 times improvement in ON current as compared to TMGTFET device and excellent average sub-threshold swing of 21.2 mV/decade. The maximum unity current gain frequency is also improved by 3 times indicating its potential for deployment in high frequency applications.

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“…It is the time taken by the charge carriers (electrons) to cross the channel. Analytical expression for calculating the transit time as expressed in [20] is-…”

Section: Transit Timementioning

confidence: 99%

Design & Optimization of Gate-All-Around Tunnel FET for Low Power Applications

Dutta

Soni

Pattanaik

2018

IJET

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“…Different architectures of TFETs have been proposed till date to improve their performance and increase the on currents. [22,23], nanowire TFET [24,25], heterojunction TFET [26,27], III-V TFET [28], triple material gate TFET [29,30], cylindrical TFET [31] and SOI TFET [32] are some of the widely used structures.…”

Section: Introductionmentioning

confidence: 99%

Dielectric-Modulated TFETs as Label-Free Biosensors

Goswami¹,

Bhowmick²

2018

Design, Simulation and Construction of Field Effect Transistors

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This chapter presents tunnel field effect transistors (TFETs) as dielectric-modulated (DM) label-free biosensors, and discusses various aspects related to them. A brief survey of the dielectric-modulated TFET biosensors is presented. The concept of dielectric modulation in TFETs is discussed with focus on principle and design perspectives. A Technology Computer Aided Design (TCAD) based approach to incorporate embedded nanogaps in TFET geometries along with appropriate physics-based simulation models are mentioned. Non-ideal conditions in dielectric-modulated biosensors are brought to light, keeping in view the practical considerations of the devices. A gate engineered TFET is taken up for analysis of sensitivities under different conditions through TCAD simulations. Finally, a status map of the sensitivities of the most significant works in dielectric-modulated label-free biosensors is depicted, and the status of the proposed TFET is highlighted.

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“…Recently, numerous structural and material designs of TFETs have been proposed with an objective to achieve improvement in subthreshold swing (SS) and off current. A few of them are bandgapengineered TFETs [3], graphene nanoribbon TFETs [4], gate-engineered TFET [5], and strained silicon-germanium TFETs [6]. Double-gate TFET [7], dual-material gate TFET [8], hetero-gate dielectric TFET [9], and heterojunction TFETs [10] have also been investigated for improved electrical parameters of TFET.…”

Section: Introductionmentioning

confidence: 99%

Band Gap Modulated Tunnel FET

Bhowmick¹,

Goswami²

2018

Design, Simulation and Construction of Field Effect Transistors

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This chapter presents bandgap-modulated tunnel field effect transistor (TFET) and discusses its simulation and modeling. A geometry of TFET, the heterojunction TFET, is considered, and different electrical parameters are discussed using Technology Computer Aided Design (TCAD) tool. The effect of the heterojunction on the characteristics is observed through the variations in the length and mole fraction of the pocket layer adjacent to the source. An analytical model is further presented for gate-drain underlap TFET using 2-D Poisson equation and Kane's interband tunneling model. The results are validated with the output from the TCAD tool.

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Performance Enhancement of Novel InAs/Si Hetero Double-Gate Tunnel FET Using Gaussian Doping

Cited by 141 publications

References 27 publications

Design & Optimization of Gate-All-Around Tunnel FET for Low Power Applications

Design & Optimization of Gate-All-Around Tunnel FET for Low Power Applications

Dielectric-Modulated TFETs as Label-Free Biosensors

Band Gap Modulated Tunnel FET

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