Performance enhancement of solution-processed amorphous WZTO TFT with HAO gate dielectric via power ultrasound technology

Hu, Sunjie; Yuan, Yanyu; Peng, Cong; Chen, Longlong; Zhang, Jianhua

doi:10.1016/j.displa.2023.102408

Cited by 3 publications

(1 citation statement)

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“…In addition, further reduction of electron carrier concentration in ZTO films can be achieved by doping. Up to now, several groups have confirmed using Ga [11], W [12], Al [13], and Zr [14] as carrier suppressors in ZTO films prepared via a solution process, and the corresponding TFT performance has been improved.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature preparation and characteristics of top-gate thin-film transistors with La-ZTO active layers and polymethylmethacrylate dielectric layers

Yue,

Meng,

Min

2024

Semicond. Sci. Technol.

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Top-gate coplanar-structure thin film transistor (TFT) combining advantages of both co-sputtered amorphous La-doped ZnSnO (a-La-ZTO) active layer and solution-based polymethylmethacrylate (PMMA) gate dielectric layer has been prepared under low temperature (100℃) with low cost for the first time. The results indicate that PMMA thin film demonstrates anti-reflection phenomenon when it combines with a- La-ZTO layer to form double-layer film, displaying the high transparency to visible light of ~90.3%. Moreover, it was found that the La target power during the deposition of a- La-ZTO film plays an important role in suppressing the formation of oxygen vacancies and adjusting the carrier concentration of a-La-ZTO active layer, thus impacting on a-La-ZTO TFTs performance. Overall, the optimum a-La-ZTO TFT with a La target power of 13.9W, working in a n-channel enhancement mode, possessed a large saturated mobility (＞10 cm2/Vs) and on/off drain current ratio over 105.

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