Performance enhancement of strip-loaded electro-optic modulator using photobleaching-assisted method

Wang, Xibin; Sun, Jian; Sun, Junqi; Sun, Xiaoqiang; Chen, Chang-Ming; Wang, Fei

doi:10.1007/s00340-015-6045-9

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…Electro-Optic (EO) modulator is a crucial component for signal processing and optics communications. Silicon, InP, LiNbO 3 , nonlinear polymers have been used in EO modulators construction to satisfy the requirements of fast response, wide optical bandwidth, compact size, low insertion loss, and power saving [1]- [7]. Electro-absorption (EA) EO modulators, such as Ge or SiGe modulators, have benefits of small size and broadband operation.…”

Section: Introductionmentioning

confidence: 99%

Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide

Zhang

et al. 2019

IEEE Photonics J.

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Compact high-performance electro-optic (EO) modulators are key elements for optical communications. An electro-absorption modulator is theoretically designed. Due to the introduction of graphene film over the silicon slot waveguide, the modulation efficiency is strongly improved. The effect of waveguide dimensions, dielectric insulator thickness, and carrier mobility on performances of the proposed EO modulator have been comprehensively investigated. For the 120-μm-long graphene-on-silicon waveguide modulator, the extinction ratio 28 dB and insertion loss 1.28 dB can be obtained at 1550 nm when drive voltage is 1.91 and 0.59 V, respectively. The 3 dB bandwidth of 117 GHz can be obtained at a small power consumption of 212 fJ/bit. The proposed modulator possesses a high figure-of-merit of 20.5. Its benefits of small size, power saving, and process compatible promises possible applications in on-chip signal processing.

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Section: Introductionmentioning

confidence: 99%

Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide

Zhang

et al. 2019

IEEE Photonics J.

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“…In this paper, we firstly designed and fabricated a M-Z thermal optical switch at 532 nm with a top electrode using the wet etching method. We then proposed a UV-writing method [17,18,19] to achieve few modes waveguide in order to optimize the extinction ratio. The side electrode structure without cladding was introduced to guarantee fast switching properties.…”

Section: Introductionmentioning

confidence: 99%

Polymer M-Z Thermal Optical Switch at 532-nm Based on Wet Etching and UV-Writing Waveguide

Cao

Lin

et al. 2019

Polymers

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Polymer thermal optical switches have low power consumption and 532 nm is the communication window of polymer fiber. Polymer thermal optical switches at 532 nm are rarely reported, because of switching extinction ratio properties that are restricted by modes of the waveguide. Single mode waveguide at 532 nm is hard to fabricate due to the dissolution of core and cladding materials. A polymer M-Z thermal optical switch at 532 nm was first demonstrated based on the wet etching method. The proposed thermal optical switch was consisted of silica substrate, photosensitive polymer core, and cladding material. The device was fabricated and tested with the power consumption of 6.55mW, extinction of 4.8 dB, and switching time of 0.23 ms (rise)/0.28 ms (down). An optimized switch structure combining with the UV-writing technique and graphene thermal conduction layer was proposed based on the experiments above. A side electrode was designed to reduce the power consumption and the switching time. The optimized device was calculated to have a power consumption of 1.5 mW. The switching time of the UV-writing device was simulated to be 18.2 μs (rise) and 85 μs (down). The device is promising in the wearable device and laser radar area.

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High Figure of Merit Electro-Optic Modulator Based on Graphene on Silicon Dual-Slot Waveguide

Gao

et al. 2018

IEEE J. Quantum Electron.

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Performance enhancement of strip-loaded electro-optic modulator using photobleaching-assisted method

Cited by 4 publications

References 29 publications

Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide

Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Slot Waveguide

Polymer M-Z Thermal Optical Switch at 532-nm Based on Wet Etching and UV-Writing Waveguide

High Figure of Merit Electro-Optic Modulator Based on Graphene on Silicon Dual-Slot Waveguide

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