Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing

Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar

doi:10.1016/j.spmi.2017.12.054

Cited by 15 publications

(5 citation statements)

References 22 publications

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“…[33] The extracted values of Vth and µ are similar to the report of Li et al and Varma et al using low temperature ZnO thin films. [31], [34] In total, 28 devices were fabricated and the variation in device performance is shown in Fig. 4e and 4f for Vth and µ, respectively.…”

Section: A Zno Tft Performancementioning

confidence: 99%

Zero Waste and Biodegradable Zinc Oxide Thin-Film Transistors for UV Sensors and Logic Circuits

Nogueira

Kumar

Zhang

et al. 2023

IEEE Trans. Electron Devices

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Section: A Zno Tft Performancementioning

confidence: 99%

Zero Waste and Biodegradable Zinc Oxide Thin-Film Transistors for UV Sensors and Logic Circuits

Nogueira

Kumar

Zhang

et al. 2023

IEEE Trans. Electron Devices

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“…The wide bandgap of zinc oxide (E g ~ 3.37 eV) makes it a suitable UV sensing material since its response is not affected by visible light, differently to, for example, Si-based photosensors [32,[43][44][45]. Another interesting feature of ZnO-based devices is the occurrence of persistent photoconductive, that is, the material conductivity remains higher than the dark conductive even several hours after UV-light exposure.…”

Section: Tft Photoresponse In the Uv Rangementioning

confidence: 99%

Electrical Characterization of Thin-Film Transistors Based on Solution-Processed Metal Oxides

Braga¹,

Lima²,

Gozzi³

et al. 2018

Design, Simulation and Construction of Field Effect Transistors

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This chapter provides a brief introduction to thin-film transistors (TFTs) based on transparent semiconducting metal oxides (SMOs) with a focus on solution-processed devices. The electrical properties of TFTs comprising different active layer compositions (zinc oxide, aluminum-doped zinc oxide and indium-zinc oxide) produced by spin-coating and spray-pyrolysis deposition are presented and compared. The electrical performance of TFTs is evaluated from parameters as the saturation mobility (μ sat), the TFT threshold voltage (V th) and the on/off current (I on /I off) ratio to demonstrate the dependence on the composition of the device-active layer and on ambient characterization conditions (exposure to UV radiation and to air).

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“…Thanks to the benefit of bottom-gate structure thin film transistors (TFTs) with the electric field effect and having an open channel for light illumination, the I dark can be minimized by a gate bias (V G ) at turn-on voltage (V on ) in the deep subthreshold region, and a I ph can be amplified by the field effect of TFT through the negative threshold voltage (V th ) shift (ΔV th ) caused by the significant increase in the carrier concentration during UV irradiation, higher photodetection performance can be obtained. [20][21][22][23][24][25][26] Compared to the In-Ga-ZnO (IGZO) TFTs, the Si-Zn-SnO (SZTO) TFTs with In-and Ga-free channel layer, a wider bandgap of ∼3.7 eV, higher mobility, and better stability, have been demonstrated to be promising candidates for UVPDs. [27][28][29][30] In general, the thickness of the channel layer (T ch ) should be thin enough to have a fully depleted channel to reduce I dark and improve photosensitivity (S ph ), however, I ph and photoresponsivity (R ph ) are suppressed due to the limited space for carrier generation and high channel resistance.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

Chen²,

Cheng³

et al. 2022

Jpn. J. Appl. Phys.

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Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark current (I dark) and photocurrent (I ph) are reported. Experimental results show that under 275 nm irradiation, the proposed SZTO TFT UVPD with a 30-nm-thick upper layer stacked on a 50-nm-thick channel layer and a patterned NiO CL exhibit excellent photoresponsivity and photosensitivity up to 1672 A/W and 1.03×107 A/A, which is about 272 and 137 times higher than conventional 30-nm-thick single-channel layer SZTO TFT. These improvements are due to the use of DCL forms a high-low junction to reduce the effective channel thickness and increase the space for UV illumination and the use of NiO CL lowers the I dark and causes a considerable negative threshold voltage shift under UV irradiation to significantly boost the I ph.

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Performance evaluation of bottom gate ZnO based thin film transistors with different W/L ratios for UV sensing

Cited by 15 publications

References 22 publications

Zero Waste and Biodegradable Zinc Oxide Thin-Film Transistors for UV Sensors and Logic Circuits

Zero Waste and Biodegradable Zinc Oxide Thin-Film Transistors for UV Sensors and Logic Circuits

Electrical Characterization of Thin-Film Transistors Based on Solution-Processed Metal Oxides

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

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