Performance evaluation of free-silicon organic-inorganic hybrid (SiO2-TiO2-PVP) thin films as a gate dielectric

Najafi-Ashtiani, Hamed

doi:10.1016/j.apsusc.2018.06.010

Cited by 20 publications

(2 citation statements)

References 35 publications

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“…The improvement in mobility might be due to the hybrid gate dielectric that induced more free carriers into the channel/dielectric interface during the application of the gate voltage. 128 Han et al reported work on insulating the hydroxyl groups from the accumulation layer and aligning them by applying a gate voltage. 129 An additional field along the gate-field direction appeared due to the polarization of oriented hydroxyl groups, which induced extra charge in the accumulation layer through sandwiched polar dielectric layer between hydrophobic polymer layers.…”

Section: Limited To Conjugated Polymers 77mentioning

confidence: 99%

Review—Charge Carrier Mobility of Organic Thin Film Transistor: Intrinsic and Extrinsic Influencing Factors Based on Organic Semiconducting Materials

Wahab

Abdulhameed²,

Ismail

et al. 2023

ECS J. Solid State Sci. Technol.

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The use of organic thin film transistors (OTFTs) is growing rapidly as an alternative to their inorganic counterparts due to their advantageous properties, such as easy processing and flexibility. The performance of OTFTs is still undergoing improvement and taking this as a recognition, this paper reviews various factors that influence the performance of the OTFTs, primarily in terms of field-effect mobility. The influencing factors reviewed in this article are divided into intrinsic and extrinsic factors for different organic semiconducting materials (OSMs). The intrinsic factors include the OSMs’ molecular orientation, OSM/dielectric interaction, and OSM/electrode interaction. The extrinsic factors are basically related to the OSM processing and OTFTs fabrication. For example, the article discusses how mixing, blending, and annealing affect the properties of the OSMs. The effect of the ambient atmosphere on OTFTs’ performance is also discussed. The aim of this article is to discuss the current trends related to one of the critical figures of merit of OTFTs, which is the mobility of charge carriers.

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Section: Limited To Conjugated Polymers 77mentioning

confidence: 99%

Review—Charge Carrier Mobility of Organic Thin Film Transistor: Intrinsic and Extrinsic Influencing Factors Based on Organic Semiconducting Materials

Wahab

Abdulhameed²,

Ismail

et al. 2023

ECS J. Solid State Sci. Technol.

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“…In contrast, metal oxide dielectrics with high permittivity offer enhanced areal capacitance and reduced leakage current, enabling lower operating voltages and improved device performance. High-k metal oxide dielectric films such as Al2O3, ZrO2, and HfO2 have garnered attention for their simple, cost-effective production via solution-processing techniques like spin coating and inkjet printing [9][10][11][12][13] .…”

Section: Introductionmentioning

confidence: 99%

35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current

Liu,

Chen,

Liao

et al. 2024

Symp Digest of Tech Papers

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With the miniaturization and integration of wearable electronics, there are some serious problems such as signal crosstalk and high power consumption that restrict its development. Active‐matrix thin‐film transistors (TFTs) with high permittivity (high‐k) insulator layer provide a promising opportunity for reducing signal crosstalk and power consumption of wearable electronics. Here, we propose a simple and cost‐effective gradient heating‐up strategy to prepare high‐k zirconium dioxide (ZrO 2)‐based dielectric films. Amorphous ZrO 2 films annealed at 400°C exhibits a high transmittance and a high dielectric properties of a relative low leakage current (10‐8 A/cm2 ) and large capacitance density of 215 nF/cm2 . To meet requirements of flexible wearable electronics, ZrO 2‐organic polymer hybrid dielectric film was further developed. A smooth surface morphology (Sa=0.478 nm) and good dielectric performance (~10‐8 A/cm2 ) of ZrO 2‐based hybrid film was obtained at 250°C, which can promote the development of flexible TFT and extend the application scenarios of wearable electronics.

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Maskless atmospheric pressure PECVD of SiO_x films on both planar and nonplanar surfaces using a flexible atmospheric microplasma generation device

Wang

Liu

Shi

et al. 2019

Plasma Processes & Polymers

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This paper presents the use of a simple‐arranged, low‐cost, and flexible atmospheric pressure microplasma generation device (μPGD) with controlled gas discharge to achieve maskless atmospheric plasma‐enhanced chemical vapor deposition (PECVD) of SiOx films on both planar and nonplanar surfaces. The μPGD is mainly composed of a copper–polyimide–copper sandwich structure with predefined microfluidic channels. Uniform microplasmas of different shapes and dimensions were generated in the open air. SiOx films were masklessly deposited with well‐defined edges and good feature transfer fidelity. The SEM, EDS, XPS, and FTIR spectra of the deposited film confirm the SiOx structure. These results indicate that μPGD is able to achieve maskless PECVD of SiOx films in the open air, especially micropatterning on nonplanar surfaces.

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Performance evaluation of free-silicon organic-inorganic hybrid (SiO2-TiO2-PVP) thin films as a gate dielectric

Cited by 20 publications

References 35 publications

Review—Charge Carrier Mobility of Organic Thin Film Transistor: Intrinsic and Extrinsic Influencing Factors Based on Organic Semiconducting Materials

Review—Charge Carrier Mobility of Organic Thin Film Transistor: Intrinsic and Extrinsic Influencing Factors Based on Organic Semiconducting Materials

35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current

Maskless atmospheric pressure PECVD of SiO_x films on both planar and nonplanar surfaces using a flexible atmospheric microplasma generation device

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Performance evaluation of free-silicon organic-inorganic hybrid (SiO2-TiO2-PVP) thin films as a gate dielectric

Cited by 20 publications

References 35 publications

Review—Charge Carrier Mobility of Organic Thin Film Transistor: Intrinsic and Extrinsic Influencing Factors Based on Organic Semiconducting Materials

Review—Charge Carrier Mobility of Organic Thin Film Transistor: Intrinsic and Extrinsic Influencing Factors Based on Organic Semiconducting Materials

35‐1: Invited Paper: High‐quality high‐k ZrO2‐based dielectric film with low leakage current

Maskless atmospheric pressure PECVD of SiOx films on both planar and nonplanar surfaces using a flexible atmospheric microplasma generation device

Contact Info

Product

Resources

About

35‐1: Invited Paper: High‐quality high‐k ZrO₂‐based dielectric film with low leakage current

Maskless atmospheric pressure PECVD of SiO_x films on both planar and nonplanar surfaces using a flexible atmospheric microplasma generation device