Performance Evaluation of LiNbO₃-based Negative Capacitance Field Effect Transistors (NCFETs)

Eliminating Ferroelectric Hysteresis in All-Two-Dimensional Gate-Stack Negative-Capacitance Transistors

“…In recent years, negative-capacitance field-effect transistors (NC FETs) as a new type of steep-slope switches have aroused extensive research interest. − By inserting a ferroelectric dielectric into the gate stack of a normal metal oxide semiconductor FET (MOS FET), the gate voltage is amplified and is predicted to reduce the SS below 60 mV/decade. So far, many ferroelectric materials have been used to construct NC FETs, including such as polyvinylidene fluoride ferroelectric polymer [P­(VDF TrFE)] , − LiNbO 3 , − ferroelectric hafnium zirconium oxide (HZO), − two-dimensional ferroelectric material (CuInP 2 S 6 ), − etc. Although the steep-slope characteristic with SS less than 60 mV/decade has been observed in many reported NC FETs, generally, considerably large hysteresis also existed which were unfavorable for logic integrated circuits. − Some theoretical analyses reveal that this hysteresis should stem from the mismatch between the MOS capacitance and the ferroelectric NC .…”