Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design

Kumar, Ajay; Gupta, Neha; Tripathi, Shrey Kumar; Tripathi, M. M.; Chaujar, Rishu

doi:10.1016/j.aeue.2019.153052

Cited by 39 publications

(12 citation statements)

References 24 publications

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“…Moreover, the developed model is a nearest neighbor tight binding model which assumes that the channel characteristics at any point are only dependent upon its nearest neighbor in both x and y directions. This assumption eliminates the complexity of solving the time-independent Schrödinger wave equation, as the wave function, ψ, is only dependent upon its nearest neighbors as illustrated by Equation (8).…”

Section: Resultsmentioning

confidence: 99%

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A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs)

Memon

Ahmed

2021

Int J Numerical Modelling

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This article presents a Schrödinger–Poisson based technique to predict I−V characteristics of trigate Si fin field effect transistors (FinFETs). The channel characteristics are modeled by a three‐dimensional (3D) Schrödinger wave equation considering quantum‐mechanical ballistic transport. Using a nonequilibrium green function and a 3D Poisson equation, drain current associated with source‐drain Fermi energy difference is evaluated. Contact resistance and its impact on the drain current is adjusted using a modeled parameter in Fermi‐Dirac distribution function. It is observed that the drain current as a function of drain bias saturates because of the finite carrier supply from the source electrode. The model is calibrated using TCAD simulations for quantum transport. To validate the proposed model, output and transfer characteristics of nanoscale FinFETs are compared with experimental data and a good degree of accuracy is observed. It has been demonstrated that the proposed model has the ability to predict FinFETs characteristics having Tfin=3−350.24emnm.

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Section: Resultsmentioning

confidence: 99%

“…4 Due to their very design, FinFETs exhibit more control upon the channel characteristics and thus open doors for further device scaling. 5 FinFETs offer promising characteristics both at low power to allow further device concentration per unit area, and at a high frequency [6][7][8] to accommodate the ever expanding communication needs.…”

Section: Introductionmentioning

confidence: 99%

A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs)

Memon

Ahmed

2021

Int J Numerical Modelling

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“…The performance of 1‐dB compression point with temperature is shown in Figure 6a. It is observed that 1‐dB compression point value increases with temperature and the peak value of 1‐dB compression point is obtained for temperature of 500 K. To examine the temperature effect on distortion characteristics, second and third order harmonic distortion HD2 and HD3 are shown in Figure 6b,c and HD2 and HD3 can be expressed 47 by

HD 2 goodbreak= 0.5 v_{a} \frac{\frac{{dg}_{m}}{{dV}_{gs}}}{2 g_{m}},

HD 3 goodbreak= 0.25 v_{a}^{2} \frac{\frac{d^{2} g_{normalm}}{d^{2} V_{gs}}}{6 g_{normalm 1}} .

The amplitude of v a is considered 50 mV. The HD2 and HD3 value should be less for superior linearity performance.…”

Section: Resultsmentioning

confidence: 99%

Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor

Das

Maity

Chowdhury

et al. 2021

Int J RF Mic Comp-Aid Eng

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This dissertation demonstrates the reliability issues associated with the temperature of Ge multi‐channel fin shaped field‐effect transistor (Mch‐FinFET). Temperature dependence on short channel effectss such as threshold voltage (Vth), sub‐threshold swing (SS), and switching ratio are observed. The variation in temperature on various important radio frequency (RE)/analog, linearity, and harmonic distortion characteristics are studied and analyzed over a wide range of temperatures (300–500 K). The simulation study revealed that Mch‐FinFET devices exhibit 61.6% improvement in ION with minimum SS value. The improvement of SS, switching ratio and Vth can be observed with temperature fall. The enhancement in performance of various RF/analog attributes such transconductance, device efficiency, transconductance frequency product, gain frequency product, cut‐off frequency, and intrinsic gain with lowering of temperature. However, Mch‐FinFET device provides a significant improvement of higher‐order current and voltage intercept points such as IIP3, VIP2, VIP3, and 1 dB compression point with lesser harmonic distortion such as HD2, HD3, and THD at elevated temperature. The superior efficiency of DC and RF/analog attributes, greater linearity, and minor harmonic distortion performance of Mch‐FinFET make it more considerable to design low power Complementary metal–oxide–semiconductor (CMOS) circuits.

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“…It is an important issue to address when IC operates at high temperatures especially for analog and digital applications. Therefore, temperature investigation is done to find the reliability of GaNNW/Al2O3-MOSFET for analog and linearity applications [22]. In this section, the performance of GaNNW/Al2O3 MOSFET is studied in terms of analog FOMs for low power, applications and the results are simultaneously compared with SiNW MOSFET with silicon oxide (SiO2) and Aluminium oxide (Al2O3) as gate oxide material.…”

Section: Introductionmentioning

confidence: 99%

Suppressed Distortion Performance Metrics of 20nm GAA-GaN/Al2O3 Nanowire MOSFET: Based on Quantum Numerical Simulation 

Gupta¹,

Jain

Kumar

2021

Preprint

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This work investigates the suppressed distortion performance metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel MOSFET (GaNNW/Al2O3 MOSFET) based on quantum numerical simulations at room temperature (300 K). The simulation results show high switching ratio (≈109) with low subthreshold swing (67mV/decade), high QF value (4.1mS-decade/mV) of GaNNW/Al2O3-MOSFET in comparison to GaNNW/SiO2 and SiNW MOSFET for Vds=0.4V due to the lower permittivity of GaN and more effective mass of the electron. Furthermore, linearity and distortion performance is also examined by numerically calculating transconductance and its higher derivatives (gm2 and gm3); voltage and current intercept point (VIP2, VIP3 and IIP3); 1-dB compression point; Harmonics distortions (HD2 and HD3) and IMD3. All these parameters show high linearity and low distortion at zero crossover point (where gm3=0) in GaNNW/Al2O3 MOSFET. Thus, GaNNW MOSFET can be considered as a promising candidate for low power high-performance applications. In addition, effect of ambient temperature (250K-450K) on the performance of GaNNW/Al2O3 is studied and discussed in terms of the above mentioned metrics. It is very well exhibited that SS, Ion, Vth, and QF improved when the temperature is lowered which makes it suitable for low-temperature environments. But, linearity degrades as the temperature lowers down.

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Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design

Cited by 39 publications

References 24 publications

A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs)

A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs)

Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor

Suppressed Distortion Performance Metrics of 20nm GAA-GaN/Al2O3 Nanowire MOSFET: Based on Quantum Numerical Simulation

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Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design

Cited by 39 publications

References 24 publications

A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs)

A Schrödinger–Poisson model for output characteristics of trigate ballistic Si fin field effect transistors (FinFETs)

Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor

Suppressed Distortion Performance Metrics of 20nm GAA-GaN/Al2O3 Nanowire MOSFET: Based on Quantum Numerical Simulation&nbsp;

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Suppressed Distortion Performance Metrics of 20nm GAA-GaN/Al2O3 Nanowire MOSFET: Based on Quantum Numerical Simulation