Performance Evaluation of Negative-Capacitance Fin-Type Field Effect Transistor-Based Static Random-Access Memory with Mixed-Mode Simulation

Abstract

Electrical characteristics of fin-type field-effect transistor with negative capacitance effect (NCFinFET) are investigated coupled with the Landau-Khalatnikov equation for ferroelectric materials in this study. Moreover, Technology Computer Aided Design (TCAD) mixed-mode simulation is carried out to evaluate and compare the performance of NCFinFET-based static random access memory cell (NC-SRAM) with a traditional FinFETbased SRAM one. It is shown NC-SRAM has higher static noise margin (SNM) and better anti-interference capability than conventional SRAM with the same supply voltage. The static read, hold, and write noise margins (RSNM, HSNM, and WSNM, respectively) for NC-SRAM increased by 10%, 30%, and 15%, respectively, and the access disturb stability improved by 80%. Simulation results also reveal that the read stability increases with increasing ferroelectric layer thickness, while the write stability exhibits a non-monotonic trend with ferroelectric layer thickness for NC-SRAM.