Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

Luong, Tien-Tung; Tran, Binh Tinh; Ho, Yen Teng; Ha, Minh-Thien-Huu; Hsiao, Yu-Lin; Liu, Shih-Chien; Chiu, Yu-Sheng; Chang, En-Chih

doi:10.1007/s13391-014-4219-y

Cited by 15 publications

(11 citation statements)

References 45 publications

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“…Other works suggest that in-plane layer stress plays an important role in 2DEG mobility, where lower stress corresponds to higher mobility due to less strain induced relaxation mechanisms [17]. Furthermore, having more compressive stress in the GaN layer will reduce the tensile strain in the top AlGaN barrier layer, which can improve surface morphology and increase mobility.…”

Section: Afm and Xrd Defect And Strain Analysismentioning

confidence: 99%

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

Perozek¹,

Lee²,

Krishnan³

et al. 2017

J. Phys. D: Appl. Phys.

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An AlGaN/GaN high electron mobility transistor (HEMT) structure is grown on a 200 mm Si(1 1 1) substrate. The AlGaN/AlN/GaN heterostructure atop, which forms the 2D electron gas, is studied via transmission electron microscopy (TEM), scanning tunneling microscopy, and TEM chemical analysis. To quantify the uniformity of structural, optical, and electrical properties of these AlGaN/GaN HEMT structures, scanning electron microscopy, optical microscopy, atomic-force microscopy, x-ray diffraction (ω/2θ scan and reciprocal space mapping) and Hall effect measurements are employed across the center, middle, and edge of the 200 mm wafer. Small thickness (<3%) and Al-content (<3%) variations in (Al)GaN layers across the wafer are recorded whereas a considerable change (28%) in the electron mobility is observed across the wafer that correlates with variations in surface roughness, defectivity, and layer stress. We attribute the higher mobility in the middle of the wafer to lower interface scattering, thanks to lower surface roughness and less edge-type dislocation density. Additionally, argon (Ar) ion implantation is used as a means for planar electrical isolation, and a seven orders of magnitude decrease in leakage current is achieved when an optimum Ar dose of 10 13 cm −2 is used. The feasibility of scaling AlGaN/GaN HEMTs on a 200 mm Si(1 1 1) platform is discussed.

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Section: Afm and Xrd Defect And Strain Analysismentioning

confidence: 99%

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

Perozek¹,

Lee²,

Krishnan³

et al. 2017

J. Phys. D: Appl. Phys.

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“…AlN is an important material of group III-nitride semiconductor because it is required for developing high-power electronic and optoelectronic devices, such as radiofrequency filters, high electron mobility transistors, microelectromechanical systems1234. In particular AlN is needed for AlGaN-based deep UV-LED applications56.…”

mentioning

confidence: 99%

Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications

Tran

Maeda

et al. 2016

Sci Rep

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An AlN template layer is required for growth of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs). However, the crystal quality of AlN templates grown on both flat and patterned Si substrates has so far been insufficient for replacing templates grown on sapphire substrates. In this work, we grew a high-quality AlN template on 2 in. micro-circle-patterned Si substrate (mPSiS) with two different sizes and shapes through controlling the bias power of inductively coupled plasma (ICP) etching. The experimental results showed that the best AlN template was obtained on a large pattern size with a bow-angle shape and the template had X-ray rocking curves with full widths at half-maximum of 620 and 1141 arcsec for the (002) and (102) reflection planes. The threading dislocation density near surface of AlN template through transmission electron microscopy (TEM) estimation was in the order of 107 cm−2, which is the lowest dislocation density reported for a Si substrate to our knowledge. A strong single electroluminescence (EL) peak was also obtained for an AlGaN-based deep UV-LED grown on this template, means that it can be used for further developing high-efficiency deep UV-LEDs.

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“…Single crystal sapphire (Al 2 O 3 ) wafer has become one of the most popular substrates for growing III–V semiconductor materials for optoelectronic and power electronic devices since its initial development in the 1960s 1 . Sapphire substrate in particular is the most widely used in III-Nitride semiconductor materials for light-emitting diodes (LEDs) 2 , deep ultraviolet LEDs (DUV-LEDs) 3 – 6 , laser diodes 7 and high electron mobility transistors 8 , 9 compared to other substrates such as SiC 10 , 11 and Si 12 – 15 , due to the low lattice mismatch, large diameter, high optical transparency, high thermal stability and corrosion resistance, low cost, etc 16 – 19 . However, sapphire substrates pose many other problems such as cutting and polishing after chip growth and fabrication due to the high hardness and its orientation.…”

Section: Introductionmentioning

confidence: 99%

Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes

Tran

AlQatari

2021

Sci Rep

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A new method has been established and employed to create a random nanophotonic crystal (NPhC) structure without photolithography on the unpolished side of a single-side-polished sapphire substrate. This nano structure has potential use in enhancing the light-extraction efficiency (LEE) of deep ultraviolet light-emitting diodes (DUV-LEDs), and has never been built for DUV-LED applications before. Two mask layers in the nano scale (Au and SiO2) were used to create the NPhC and observed using scanning electron microscopy to have an average height of 400 nm and various sizes from 10 to 200 nm. Finally, a conventional DUV-LED and a DUV-LED device with NPhC were simulated using 2D Lumerical Finite-Difference Time-Domain (FDTD) for comparison. The results show that the LEE of the DUV-LED device with this NPhC integrated was significantly directly enhanced by up to 46% and 90% for TE and TM modes, respectively, compared to the conventional DUV-LED device. Thus, this NPhC is believed to be a new, key technique to enhance the LEE of DUV-LEDs.

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Performance improvements of AlGaN/GaN HEMTs by strain modification and unintentional carbon incorporation

Cited by 15 publications

References 45 publications

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200 mm Si(1 1 1) substrate

Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications

Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes

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