Performance limits of room-temperature InAsSb photodiodes

Abstract

The theoretical performance of medium wavelength infrared (MWIR) InAsSb-based ternary alloy photodiodes is examined theoretically taking into account thermal generation governed by the Auger and radiative mechanisms. The contribution of spin-off band on carrier lifetime in p-type InAsSb ternary is re-examined due to new insight into composition dependence of spin-orbit-splitting band gap energy. The investigations are carried out for photodiodes operated at room temperature. The effects of doping profiles on the photodiode parameters (R 0 A product and detectivity) are considered. The theoretical predictions of photodiode parameters are compared with experimental data published in the literature.

InAs0.7Sb0.3 Bulk Photodiodes Operating at Thermoelectric‐Cooler Temperatures

“…The R p‐n A values at T = 250–300 K appeared higher than R o A published by Razeghi for the InAsSb/InSb heterostructure PDs with nearly similar spectral response; in addition, at RT, the R p‐n A value is not far from the expectations based on simulations made by Wróbel in Ref. .…”

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

“…The predicted contribution of Auger S process is dominant in InAs1-xSbx semiconductors close to InAs (for 0 ≤ x ≤ 0.15) taking more recently estimated dependence of ∆(x) [89]. It follows that InAsSb photodiodes have lower Auger S nonradiative losses than were reported previously [91]. This adjustment has substantial implications on the p-type InAsSb-based devices' design.…”

“…This adjustment has substantial implications on the p-type InAsSb-based devices' design. is calculated assuming spin-orbit-splitting bandgap energies after [75,89] (after [91]).…”

“…By reducing the photodiode volume in which diffusion current is generated, the corresponding RoA product increases by a factor of Lh/d [3], where Ld is the minority diffusion length and d is the thickness of base region. More recently, Wróbel et al have considered the effects of doping profiles on room temperature MWIR InAsSb photodiode parameters (RoA product and detectivity) [91]. In theoretical estimates a new dependence of the spin-orbit-splitting energy on the Sb molar composition was taken into account [89] -see Figure 17.…”

“…More recently, Wróbel et al have considered the effects of doping profiles on room temperature MWIR InAsSb photodiode parameters ( R o A product and detectivity) [ 91 ]. In theoretical estimates a new dependence of the spin-orbit-splitting energy on the Sb molar composition was taken into account [ 89 ] -see Figure 17 .…”