Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures

Yurong, Nelvin Leong; Tan, Kang Hai; Loke, Wan Khai; Wicaksono, Satrio; Li, Daosheng; Yoon, Soon Fatt; Sharma, Priyanka; Milakovich, Tim; Bulsara, Mayank T.; Fitzgerald, Eugene A.

doi:10.1002/pip.2870

Cited by 9 publications

(7 citation statements)

References 29 publications

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“…GaAs substrate 0,0 2,0x10 18 4,0x10 18 6,0x10 18 8,0x10 18 1,0x10 19 1,2x10 19 1,4x10 19 atoms/cm 3 Time (s) 2(a)). This fact points to an unintentional p-doping in the GaNAsSb layers as it was described previously for similar samples [22], in such a way that the total doping level would be the sum of both intrinsic (unintentional) and extrinsic doping.…”

Section: Figurementioning

confidence: 99%

Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Gabás¹,

Ochoa-Martínez²,

Bielak³

et al. 2020

Semicond. Sci. Technol.

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Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is the band-gap tunability, depending on the nitrogen content. In this work we have focussed our attention on the indium free dilute nitrides, i.e. GaNAsSb with a bandgap around 1.1 eV, to study the effects that has doping on the crystalline structure, electrical and optical properties of the material. For such purpose, p-doped and n-doped GaNAsSb layers were grown by Molecular Beam Epitaxy and characterized using X-ray diffraction, spectroscopic ellipsometry and photoreflectance among other techniques. The GaNAsSb optical properties match the double Band-Anticrossing model which is the proposed one to explain the dilute nitride band structure. However, the determined optical bandgap value does not follow any trend with doping, neither with concentration nor type. This is related with doping effects on the crystalline quality and layer composition, thus inducing a Sb gradient along layer thickness together with variations in N and Sb concentrations for different doping levels. Besides these structural variations, the complex refraction index, Hall mobility and carrier concentration as a function of temperature have been determined for these GaNAsSb layers.

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Section: Figurementioning

confidence: 99%

Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Gabás¹,

Ochoa-Martínez²,

Bielak³

et al. 2020

Semicond. Sci. Technol.

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“…Despite the beneficial features of this material it has not been as widely studied as InGaAsN, although interest in GaAsSbN has risen over the last few years (Bian et al, 2004;Gonzalo et al, 2019;T. W. Kim et al, 2014;Kim, Tae Wan et al, 2014;Lin et al, 2013;Milanova et al, 2019;Tan et al, 2011;Thomas et al, 2015;Yurong et al, 2017). Recent solar cells based on GaAsSbN have demonstrated efficiencies of 4 % for a nonoptimized single-junction solar cell structure, without anti-reflection coating grown by MOCVD ( Kim, Tae Wan et al, 2014) and 6 % for molecular beam epitaxy (MBE) grown structures (Thomas et al, 2015).…”

Section: Introductionmentioning

confidence: 99%

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

et al. 2020

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“…Other advantages are the absence of In-related defects and a more efficient incorporation of N atoms [ 17 , 18 ]. For certain, GaAsSbN has already been demonstrated as a promising material for near-infrared photodetectors [ 19 – 22 ] and solar cells [ 23 – 26 ].…”

Section: Introductionmentioning

confidence: 99%

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

et al. 2017

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As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the impact of temperature on the incorporation of Sb and N species according to the wafer radial composition gradients. The results from the combination of X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopies (EDS) show an opposite rate of incorporation between N and Sb as we move away from the centre of the wafer. A competitive behaviour between Sb and N in order to occupy the group-V position is observed that depends on the growth rate and the substrate temperature. The optical properties obtained by photoluminescence are discussed in the frame of the double-band anticrossing model. The growth conditions define two sets of different parameters for the energy level and the coupling interaction potential of N, which must be taken into account in the search for the optimum compositions 1–1.15-eV photonic applications.

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Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures

Cited by 9 publications

References 29 publications

Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

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