Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Urciuoli, Damian; Green, Ronald; Lelis, Aivars J.; Ibitayo, Dimeji

doi:10.1109/ecce.2010.5618324

Cited by 25 publications

(12 citation statements)

References 11 publications

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“…Furthermore, in a SiC MOSFET multichip module, it is also important to characterize the effect of circuit layout mismatch on the current distribution among the dies. The switching characteristic and thermal performance of SiC MOSFET modules have been discussed in [17], [20]- [22]. However, the current distribution among the paralleled dies has not been studied yet.…”

Section: Introductionmentioning

confidence: 99%

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Munk‐Nielsen

Wang

et al. 2016

IEEE Trans. Power Electron.

228

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This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to on-state current unbalance with inductive output current, in addition to the on-state resistance of the device. It further reveals that circuit mismatches and a current coupling among the paralleled dies exist in a SiC MOSFET multichip power module, which is critical for the transient current distribution in the power module. Thus, a power module layout with an auxiliary source connection is developed to reduce such a coupling effect. Lastly, simulations and experimental tests are carried out to validate the analysis and effectiveness of the developed layout.

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Section: Introductionmentioning

confidence: 99%

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Munk‐Nielsen

Wang

et al. 2016

IEEE Trans. Power Electron.

228

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“…However, this method is not applicable for the normally off power devices such as SiC MOSFET. There is a published report of the work on SiC MOSFET module in purpose of replacing silicon IGBT module in some high temperature and high-power density applications [25]. But those explorations usually focused on parallel connection of several SiC MOSFET/JFET/BJT chips, through which the module current capability can be effectively multiplied.…”

Section: Introductionmentioning

confidence: 99%

“…Such a requirement places serious restrictions to these circuits and makes the series-connected circuit unreliable. In [21]- [25] the authors proposed a super cascode structure consisting of a low-voltage Si MOSFET in series with several high voltage SiC JFETs combined with balancing diodes allows single drive. This driver for the series-connected circuit is simplified and the topology is based on the normally on characteristic of SiC JFET.…”

Section: Introductionmentioning

confidence: 99%

“…This paper demonstrates the series connection of three SiC MOSFET (CMF20120D from CREE) devices. At the same time, as the on-state resistance R ds(on) of the SiC MOSFET has a positive temperature coefficient [25], two SiC MOSFETs are directly connected in parallel to increase current capability. Moreover, two paralleled devices are placed as close as possible in order to reduce the negative effect of parasitic inductance.…”

Section: Introductionmentioning

confidence: 99%

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A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

Cheng

Xiao

et al. 2014

IEEE Trans. Power Electron.

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In this paper, a new series connection topology is introduced for silicon carbide (SiC) MOSFETs. In the topology, with a single external gate drive, three series-connected SiC MOSFETs are synchronously driven. The operating principle of the proposed topology is analyzed and presented. In order to improve the current capability of the module, parallel connection of two SiC devices are also demonstrated. A 3600 V/80 A series-parallel-connected configuration with three rows in a series and two branches in parallel is constructed with six 1200 V/40 A discrete SiC MOSFETs. Switching behavior of the configuration is completed at 2300 V/78 A. Experimental results verify the validity and feasibility of the proposed topology. Analysis based on experimental results for the circuit switching speed and switching losses is given. Finally, such a series-parallel-connected circuit is integrated in a SiC MOSFETs module, capable of 3600 V/80 A. The switching characteristics of the module are compared to the discrete configuration.

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“…Recent SiC demonstrations at ARL have shown sustained operation at heat fluxes just under 200 W cm -2 (23). Such devices can ease temperature restrictions, but may still result in increased heat fluxes imposed on the rest of the thermal management system.…”

Section: Electronics Cooling -Army Applicationsmentioning

confidence: 99%

Thermal Management as a Force Multiplier within the Research, Development, and Engineering Command (RDECOM)

Odom¹,

Jankowski²,

Morgan³

2012

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Sensors and Electron Devices Directorate, ARLApproved for public release; distribution unlimited. ii REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number.

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Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Cited by 25 publications

References 11 publications

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

Thermal Management as a Force Multiplier within the Research, Development, and Engineering Command (RDECOM)

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