In this paper, a new series connection topology is introduced for silicon carbide (SiC) MOSFETs. In the topology, with a single external gate drive, three series-connected SiC MOSFETs are synchronously driven. The operating principle of the proposed topology is analyzed and presented. In order to improve the current capability of the module, parallel connection of two SiC devices are also demonstrated. A 3600 V/80 A series-parallel-connected configuration with three rows in a series and two branches in parallel is constructed with six 1200 V/40 A discrete SiC MOSFETs. Switching behavior of the configuration is completed at 2300 V/78 A. Experimental results verify the validity and feasibility of the proposed topology. Analysis based on experimental results for the circuit switching speed and switching losses is given. Finally, such a series-parallel-connected circuit is integrated in a SiC MOSFETs module, capable of 3600 V/80 A. The switching characteristics of the module are compared to the discrete configuration.

A SiC BJT model including quasi-saturation effects is proposed in this paper. The model limits the number of parameters required for the Gummel-Poon model and the model parameters have been extracted from experimental plots. The modeling results are then implemented in a circuit simulator such as Saber to build a SiC BJT model. Validity of the model is confirmed by comparing the model with experimental static and dynamic characteristics. The model is capable of accurately reproducing device dynamic switching behavior at various voltage levels and temperatures.

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