A high performance CMOS device with inverter delay 13 ps at 1.2 V power supply

Ultrafast CMOS inverter with 4.7 ps gate delay fabricated on 90 nm SOI technology

“…In Fig. 4, the t g against supply voltage is illustrated including state-of-the-art results of CMOS inverters published to date [7][8][9][10][11][12]. We achieved outstanding results in terms of speed at room temperature.…”