Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

Kim, Do-Kywn; Sindhuri, V.; Jo, Young-Woo; Kim, Dong-Seok; Kang, Hoyoul; Lee, Jun-Hyeok; Lee, Yong Soo; Bae, Young‐Ho; Hahm, Sung−Ho; Lee, Jung‐Hee

doi:10.1016/j.sse.2014.05.007

Cited by 12 publications

(8 citation statements)

References 12 publications

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“…As shown in Fig. 9, a further characterization was conducted for the fabricated devices, based on two models of PF emission, ln(I/V)  (V) -1/2 , and Fowler-Nordheim (FN) tunneling, ln(I/V 2 )  -(1/V) [25]- [27]. The FN tunneling current was dominant at a gate bias of around -2.8 V to -3.7 V for the reference device, whereas the current was dominated at relatively lower voltages ranging from -2.5 V to -2.8 V for the plasma-exposed device.…”

Section: Device Performancementioning

confidence: 99%

Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET

Ahn¹,

Kim²,

Kang³

et al. 2016

ETRI J

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This paper demonstrates the effect of fluoride-based plasma treatment on the performance of Al 2 O 3 /AlGaN/ GaN metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of 0.20 μm. For the fabrication of the MISHFET, an Al 2 O 3 layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using CF 4 plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the Al 2 O 3 gate dielectric layer to the plasma environment. The thickness of the Al 2 O 3 gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

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Section: Device Performancementioning

confidence: 99%

Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET

Ahn¹,

Kim²,

Kang³

et al. 2016

ETRI J

Self Cite

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“…To protect the AlGaN surface from a high-temperature rapid thermal process (RTP) for ohmic contact formation, a thin Al 2 O 3 dielectric layer was then deposited at a rate of 0.7 Å/cycle at 450 °C by plasma-enhanced atomic layer deposition (PEALD). (12) For ohmic contact formation, the Al 2 O 3 layer in the source/drain region was etched away and metal layers (Si/Ti/Al/Ni/Au) were deposited by electron beam evaporation. Then, a two-step RTP was carried out, first at a low temperature of 500 °C for 20 s, and subsequently at a high temperature of 800 °C for 30 s in N 2 ambient.…”

Section: Device Fabricationmentioning

confidence: 99%

Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes

2015

Sensors and Materials

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In this study, we fabricated an AlGaN/GaN-based heterostructure field-effect transistor (HFET)-type biosensor with an extended-gate structure for detecting streptavidin-biotin complexes. The gate voltage of the fabricated device was applied using a commercial Ag/AgCl reference electrode. The binding of a self-assembled monolayer (SAM), streptavidin and biotin was detected by measuring the electrical characteristics of the fabricated biosensor. X-ray photoelectron spectroscopy (XPS) was used to verify the immobilization of the SAM on the Au-coated GaN surface. The proposed biosensor shows that biotin can be detected for a wide range of concentrations from 0.1 to 1000 ng/ml. The long-term stability of both the extended-gate AlGaN/ GaN-based HFET-type and conventional AlGaN/GaN-based HFET-type biosensors was measured in phosphate-buffered saline (PBS) solution. A high sensitivity and excellent stability of the proposed biosensor has been experimentally verified.

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“…III-nitride high-electron-mobility transistors (HEMTs) are of significant interest for next-generation power devices [1,2,3,4,5]. Remarkable progress of both the AlGaN/GaN materials quality and device performance has been achieved.…”

Section: Introductionmentioning

confidence: 99%

“…GaNbased Schottky-gate field-effect transistors suffer from the problem of high leakage current. Integration of a gate dielectric in metal-insulator-semiconductor field-effect transistors (MISFETs) has been demonstrated to offer remarkably decreased gate leakage current [3,4,5]. An alternative approach for reducing the leakage current is to passivate the surface of the devices.…”

Section: Introductionmentioning

confidence: 99%

High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment

Lin

Goa

2019

IEICE Electron. Express

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This study proposes the investigation of using the (NH 4) 2 S x solution to form the AlGaN surface passivation on the AlGaN/GaN high electron mobility transistors (HEMTs). Both treatment schemes are implemented on separate pieces of the same HEMT wafer, including (NH 4) 2 S x pregate and post-gate metal treatments. Temperature-dependent characteristics of the HEMTs are also studied. Experimental results demonstrate that by the surface treatment prior to metal, the performance of the studied HEMTs can be improved, including thermal stability, dc and high-frequency characteristics. Furthermore, the interface state density (D it) of the studied HEMT is studied by the subthreshold slope method. To the best of our knowledge, this is the first report on comparison of AlGaN/AlN/GaN HEMTs with pre-gate and post-gate metal treatments.

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Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

Cited by 12 publications

References 12 publications

Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET

Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET

Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes

High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment

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