1993 (5th) International Conference on Indium Phosphide and Related Materials
DOI: 10.1109/iciprm.1993.380721
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Performance of AlInAs/GaInAs/InP microwave DHBTs

W.E. Stanchina
1
,
T. Liu
2
,
D.B. Rensch
3
et al.
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Cited by 4 publications
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References 11 publications
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Junction barrier effects on the microwave power performance of double heterojunction bipolar transistors

Sugeng
1
,
Wei
2
,
Hwang
3
et al.
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
3
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Junction barrier effects on the microwave power performance of double heterojunction bipolar transistors

Sugeng
1
,
Wei
2
,
Hwang
3
et al.
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
3
0
0
0
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InAlAs/InGaAs(P) double heterojunction bipolar transistors with high breakdown voltage grown by chemical beam epitaxy (CBE)

Cowles
1
,
Chen
2
,
Munns
3
et al.
Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
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Power performance and reliability of AlInAs/GaInAs/InP double heterojunction bipolar transistors

Hafizi
1
,
Liu
2
,
Schmitz
3
et al.
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)
6
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