Performance of Bi2Te3-based thermoelectric modules tailored by diffusion barriers

Nguyen, Yen Ngoc; Kim, Kyung‐Tae; Chung, Soo‐Ho; Son, Injoon

doi:10.1016/j.jallcom.2021.162716

Cited by 14 publications

(3 citation statements)

References 48 publications

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“…First, a Sn layer was preplated between the SnSe crystal and Ni layer to increase the interfacial wettability ( 44 ). Second, an Au layer was sandwiched between the Ni layer and solder to optimize the interfacial bonding strength and contact resistance ( 45 ). The experimental details of preparing contact layers for handling the upper and lower surfaces of the samples can be found in the supplementary materials.…”

Section: Thermal Transports Zt and Device Efficiencymentioning

confidence: 99%

Lattice plainification advances highly effective SnSe crystalline thermoelectrics

Liu

Wang

Hong

et al. 2023

Science

207

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Thermoelectric technology has been widely used for key areas, including waste-heat recovery and solid-state cooling. We discovered tin selenide (SnSe) crystals with potential power generation and Peltier cooling performance. The extensive off-stoichiometric defects have a larger impact on the transport properties of SnSe, which motivated us to develop a lattice plainification strategy for defects engineering. We demonstrated that Cu can fill Sn vacancies to weaken defects scattering and boost carrier mobility, facilitating a power factor exceeding ~100 microwatts per centimeter per square kelvin and a dimensionless figure of merit ( ZT ) of ~1.5 at 300 kelvin, with an average ZT of ~2.2 at 300 to 773 kelvin. We further realized a single-leg efficiency of ~12.2% under a temperature difference (Δ T ) of ~300 kelvin and a seven-pair Peltier cooling Δ T max of ~61.2 kelvin at ambient temperature. Our observations are important for practical applications of SnSe crystals in power generation as well as electronic cooling.

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Section: Thermal Transports Zt and Device Efficiencymentioning

confidence: 99%

Lattice plainification advances highly effective SnSe crystalline thermoelectrics

Liu

Wang

Hong

et al. 2023

Science

207

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“…To prevent the interfacial reactions between solder and TE materials, a thin diffusion barrier, such as electrodeposited Ni, is introduced onto the soldering plane of TE materials. In recent years, extensive investigations have been conducted on the correlated interfacial reactions of lead-free solders/diffusion barriers/TE materials [9][10][11][12][13][14][15]. Electroless nickel/immersion gold (ENIG) and electroless nickel/electroless palladium/immersion gold (ENEPIG) are commonly used surface finishing processes for the diffusion barrier.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material

Wang,

Chiu,

2024

Materials

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This study investigated the interfacial reactions between n-type Bi2(Te,Se)3 thermoelectric material, characterized by a highly-oriented (110) plane, and pure Sn and Sn-3.0Ag-0.5Cu (wt.%) solders, respectively. At 250 °C, the liquid-state Sn/Bi2(Te,Se)3 reactions resulted in the formation of both SnTe and BiTe phases, with Bi-rich particles dispersed within the SnTe phase. The growth of the SnTe phase exhibited diffusion-controlled parabolic behavior over time. In contrast, the growth rate was considerably slower compared to that observed with p-type (Bi,Sb)2Te3. Solid-state Sn/Bi2(Te,Se)3 reactions conducted between 160 °C and 200 °C exhibited similar interfacial microstructures. The SnTe phase remained the primary reaction product, embedded with tiny Bi-rich particles, revealing a diffusion-controlled growth. However, the BiTe layer had no significant growth. Further investigation into growth kinetics of intermetallic compounds and microstructural evolution was conducted to elucidate the reaction mechanism. The slower growth rates in Bi2(Te,Se)3, compared to the reactions with (Bi,Sb)2Te3, could be attributed to the strong suppression effect of Se on SnTe growth. Additionally, the interfacial reactions of Bi2(Te,Se)3 with Sn-3.0Ag-0.5Cu were also examined, showing similar growth behavior to those observed with Sn solder. Notably, compared with Ag, Cu tends to diffuse towards the interfacial reaction phases, resulting in a high Cu solubility within the SnTe phase.

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“…In order to solve the bond issue, depositing the TE legs with a metallic layer is necessary. The deposited metal acts as a barrier layer, which, together with the TE legs, forms a joint to establish a tight connection between the TE legs and Cu electrodes. − A good barrier layer should fulfill the following conditions: (1) it should have a coefficient of thermal expansion (CTE) matching the TE materials, which is helpful to establish a robust joint since the thermal stress concentration at the interface could be avoided; (2) there is no significant elemental diffusion and interfacial reaction at the interface; and (3) the joints should have enough high bonding strength and low contact resistance. − …”

Section: Introductionmentioning

confidence: 99%

Enhanced Contact Performance and Thermal Tolerance of Ni/Bi₂Te₃ Joints for Bi₂Te₃-Based Thermoelectric Devices

Zhang

Wei

Zhang

et al. 2023

ACS Appl. Mater. Interfaces

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Ni metal has been widely used as a barrier layer in Bi2Te3-based thermoelectric devices, which establishes stable joints to link Bi2Te3-based legs and electrodes. However, the Ni/Bi2Te3 joints become very fragile when the devices were exposed to high temperature, causing severe performance deterioration and even device failure. Herein, stable Ni/Bi2Te3 joints have been established by arc spraying of the Ni barrier layer on the Bi2Te3-based alloys. The interface microstructure and contact performance including the bonding strength and contact resistivity of the arc-sprayed Ni/Bi2Te3 joints are investigated. The results indicate that, as compared with traditional Ni/Bi2Te3 joints, the arc-sprayed Ni/Bi2Te3 joints have comparably low contact resistivity while possessing a 50% higher bonding strength. Aging the joints as an exposure to high-temperature circumstances, the arc-sprayed Ni/Bi2Te3 joints exhibit much better tolerance to the thermal shock with stable bonding strength and contact resistivity. The enhanced interfacial contact performance and thermal tolerance should be attributed to the thick Ni barrier layer and interface reaction layer with good Ohmic contact. This work provides an effective strategy to establish stable joints for the Bi2Te3-based thermoelectric devices with improved thermal stability.

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Performance of Bi2Te3-based thermoelectric modules tailored by diffusion barriers

Cited by 14 publications

References 48 publications

Lattice plainification advances highly effective SnSe crystalline thermoelectrics

Lattice plainification advances highly effective SnSe crystalline thermoelectrics

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material

Enhanced Contact Performance and Thermal Tolerance of Ni/Bi₂Te₃ Joints for Bi₂Te₃-Based Thermoelectric Devices

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Performance of Bi2Te3-based thermoelectric modules tailored by diffusion barriers

Cited by 14 publications

References 48 publications

Lattice plainification advances highly effective SnSe crystalline thermoelectrics

Lattice plainification advances highly effective SnSe crystalline thermoelectrics

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material

Enhanced Contact Performance and Thermal Tolerance of Ni/Bi2Te3 Joints for Bi2Te3-Based Thermoelectric Devices

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Enhanced Contact Performance and Thermal Tolerance of Ni/Bi₂Te₃ Joints for Bi₂Te₃-Based Thermoelectric Devices