Performance of bulk SiC radiation detectors

Transport of the charge carriers in SiC-detector structures after extreme radiation fluences

“…The radiation hardness of SiC detectors has been studied using irradiation with neutrons [6], protons and gamma photons [7,8], electrons [9], light ions [10] and pions [11]. In a recent study [12] the radiation hardness of SiC Schottky diodes was analyzed after irradiation with 24 GeV protons and 1 MeV neutrons.…”

Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes

“…The wide bandgap of 4H-SiC (3. elevated temperature and intense radiation environments [6]. Radiation hardness studies on SiC sensors have been performed recently by means of irradiations of neutrons [7], electrons [8], protons and gamma rays [9,6], pions [10] and light ions [11]. It has been suggested [10] that operation of SiC detectors at elevated temperatures will prolong SiC detector operating lifetime.…”

Growth and characteristics of annealed ZnO layer on 6H–SiC substrate

“…However, we propose that this is not the case with a SiC substrate. Our results are considered to reflect the strong bonds between silicon (Si) and carbon (C) in the SiC crystal [7,8]. Moreover, SiC has a large band gap and high physical and chemical stabilities, resulting in a high temperature resistance.…”